Excitation of surface plasmon-polaritons through optically-induced ultrafast transient gratings
Extracted source text · arXiv 2411.17314
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\begin{document}
\title[]{Excitation of surface plasmon-polaritons through optically-induced ultrafast transient gratings}% Force line breaks with \\
\author{Olesia Pashina}
\affiliation{University of Brescia, Brescia, Italy%\\This line break forced% with \\
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\affiliation{\affilITMO}%Lines break automatically or can be forced with \\
\author{Albert Seredin}%
\affiliation{\affilITMO %\\This line break forced with \textbackslash\textbackslash
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\author{Giulia Crotti}
\affiliation{Polytechnic University of Milan, Milan, Italy%\\This line break forced% with \\
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\author{Giuseppe Della Valle}
\affiliation{Polytechnic University of Milan, Milan, Italy%\\This line break forced% with \\
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\author{Andrey Bogdanov}
\affiliation{\affilITMO%\\This line break forced% with \\
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\affiliation{Qingdao Innovation and Development Centre, Harbin Engineering University, Qingdao, Shandong 266000, China}
\author{Mihail Petrov}
\email{m.petrov@metalab.ifmo.ru}
\affiliation{\affilITMO%\\This line break forced% with \\
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\author{Costantino De Angelis}
\affiliation{University of Brescia, Brescia, Italy%\\This line break forced% with \\
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%\date{}% It is always \today, today,
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\begin{abstract}
Ultrafast excitation of non-equilibrium carriers under intense pulses offers unique opportunities for controlling the optical properties of semiconductor materials. In this work, we propose a scheme for ultrafast generation of surface plasmon polaritons (SPPs) via a transient metagrating formed under two interfering optical pump pulses in the semiconductor GaAs thin film. The grating can be formed due to modulation of the refractive index associated with the non-equilibrium carrier generation. The formed temporal grating structure enables the generation of SPP waves at the GaAs/Ag interface via weak probe pulse excitation. We propose a theoretical model describing non-equilibrium carriers formation and diffusion and their contribution to permittivity modulation via Drude and band-filling mechanisms. We predict that by tuning the parameters of the pump and probe one can reach the critical coupling regime and achieve efficient generation of SPP at the times scales of 0.1-1 ps.
\end{abstract}
\maketitle
%\begin{itemize}
%\item {Intro}. Why are atomic lattices so interesting?
%\item {}
%\end{itemize}
\section{Introduction}
The recent progress in nonlinear all-dielectric nanophotonics~\cite{kuznetsov2016optically, kivshar2018all, koshelev2020subwavelength,smirnova2016multipolar, grinblat2021nonlinear} naturally stimulated active studies of all-optical modulation of semiconductor and dielectric nanostructures such as single scatterers~\cite{pogna2021ultrafast, makarov2015tuning} and metasurfaces~\cite{maiuri2024ultrafast, shcherbakov2017ultrafast, sinev2021observation, shcherbakov2015ultrafast, zheng2023advances,gennaro2022nonlinear, yang2024ultrafast,della2017nonlinear,shilkin2024ultrafast}. On this path, thermooptical effect, probably, shows the largest values of Kerr-type nonlinearity leading to efficient modulation of linear and nonlinear light scattering~\cite{celebrano2021optical,rocco2021opto, tsoulos2020self, rahmani2017reversible,zhang2020anapole} and reaching bistability regimes~\cite{duh2020giant, nishida2023optical, zograf2021all,ryabov2022nonlinear}, but the modulation time scales can not be shorter than nanoseconds~\cite{husko2006ultrafast,duh2020giant}. At the same time, non-equilibrium carrier generation results in optical modulation at much shorter time scales ranging from hundreds of femtoseconds to picoseconds~\cite{di2020broadband}.
The ultrafast nonlinearity driven by the non-equilibrium carriers has been already utilized for Kerr-type self-induced modification of scattering of single semiconductor metaatoms~\cite{makarov2015tuning,pogna2021ultrafast} and light reflection and transmission in metasurface structures~\cite{shcherbakov2015ultrafast, sinev2021observation,yang2024ultrafast, shilkin2024ultrafast} including fast light modulation in anisotropic structures~\cite{della2017nonlinear}. Besides the self-induced modulation of optical properties, all-optical ultrastrong modulation of all-dielectric metasurfaces was achieved in the pump-probe scheme~\cite{crotti2024giant, tognazzi2023giant, yang2015nonlinear} also with help of formation of polaritonic condensates in novel excitonic materials~\cite{masharin2024giant, berte2024emergent}.
%=======================FIGURE=============================
\begin{figure}[t]
\centering \includegraphics[width=1\columnwidth]{fig1_v6.pdf}
\caption{ Illustration of optically induced transient grating formation in GaAs film under the interference of pump fs-pulses with wavelength $\lambda_{\text{pump}}$. The grating is formed due to generation of non-equilibrium free-carriers under ultrashort pump excitation. Excitation of SPP wave at GaAs/Ag interface with probe pulse with wavelength $\lambda_{\text{pr}}$.
}
\label{fig1_scheme}
\end{figure}
%=======================FIGURE=============================
The streamline strategy underlying the ultrafast all-optical manipulation and control of light is based on semiconductor nanostructures, such as single nanoantennas and metasurfaces, with pronounced resonant properties~\cite{kuznetsov2016optically,staude2019all, koshelev2020subwavelength}: indeed, resonances allow to concentrate fields on subwavelength scales, granting superior modulation efficiency in compact structures with respect to non-resonant systems, e.g., thin films. On the other hand, fabrication of nanometric components with optimal quality for applications still represents a challenge for manufacturer. Moreover, in terms of reconfigurability of the optical functionality, regardless the physical mechanism exploited for the reconfiguration (being electrical, thermal, or hot-carrier based), nanostructured materials pose a further substantial issue, i.e.~the addressability of their individual nanoelements.
We present here a possible approach to tackle these limitations, based on the concept of spatial inhomogeneity in the photo-induced permittivity variation, which has been recently explored in metals~\cite{sivan2020ultrafast,Schirato2020,Schirato2022}. We exploit non-uniform modulation of the permittivity in an initially homogeneous medium to obtain the formation of a transient nanophotonic structure.
Specifically, we theoretically propose a strategy to induce an optical grating in a thin GaAs film by illuminating it with structured light. We then show how to exploit this phenomenon to excite surface plasmon-polaritons (SPPs) at the interface between the semiconductor thin film and a metallic medium.
The grating emergence is obtained with two crossed femtosecond pump pulses, whose interference grants a spatially periodic absorption pattern (see Fig.~\ref{fig1_scheme}). In turn, this causes a periodic modulation of the permittivity $\Delta\varepsilon$ due to the non-equilibrium carriers' distribution: thus, the grating structure is transient, and exists at the time scale of carrier diffusion and recombination.
In this ultrafast temporal window, SPPs can be excited at the GaAs/Ag interface with a probe pulse, as the diffraction grating allows to fulfil the necessary phase-matching condition~\cite{Zheng2019Oct}.
To quantitatively discuss the key ideas presented above, we developed a theoretical description for the non-equilibrium carriers generation and transport dynamics at the nanoscale. Our self-consistent model represents a considerable expansion and improvement with respect to the approaches employed up-to-now to study the ultrafast response of semiconductor nanostructures, photo-excited with pulsed light.
%The streamline strategy beyond the all-optical light manipulation and control is based on utilizing semiconductor nanostructures such as single metaatoms and metasurfaces with pronounced resonant properties~\cite{kuznetsov2016optically,staude2019all, koshelev2020subwavelength}. \OP{Waiting for Giulia and Giuseppe's version.} At the same time, the local modulation depth of permittivity can be strong enough that optical structures such as single scatterers or gratings can be formed in initially homogeneous media such as thin semiconductor films under inhomogeneous illumination such as focused or structured light.
%In this work, we propose a way for subpicosecond modulation of surface plasmon polaritons at the interface between the semiconductor thin film and metal, in particular at GaAs/Ag interface as depicted in Fig.~\ref{fig1_scheme}. The key idea consists in formation of transient grating by spatial modulation of dielectric permittivity under the interference of two crossed femtosecond pump pulses. The formed grating can be further utilized for resonant ultrafast excitation of surface plasmon-polariton waves (SPPs) in the probe beam~\cite{Zheng2019Oct}. While the grating is formed due to non-equilibrium carriers dsitribution, it will exist at the time scale of carrier diffusion and recombination.
%In the following, we propose a theoretical description of the model describing the non-equilibrium carriers generation and transport dynamics, and also provide the results of step-by-step simulations of optical properties of temporary induced gratings.
%By illuminating our semiconductor film with a height of $h=300$ nm using two high-intensity 100 femtosecond pump irradiations at opposite angles of incidence with a wavelength of $\lambda_{pump} =500$ nm, we induce the localized generation of nonequilibrium carriers in the periodic peaks resulting from interference, corresponding to a $\mathrm{a}=1100$ nm. This effect leads to a periodic modification in the dielectric constant within the film, enabling the creation of a transient diffraction grating. The optically induced transient diffraction grating allows for the excitation and control of surface plasmon polaritons (SPPs)~\cite{Zheng2019Oct} from free space using low-intensity probe irradiation on ultrafast timescales, based on the satisfaction of the conservation law for wavevectors (FIG.~\ref{fig1_scheme} c)).
%However, one of the main obstacles to a detailed description of the optical properties modulation by nonequilibrium carriers and effectively utilizing this technique to control the transient diffraction grating formation and the consequent excitation of surface plasmon polaritons (SPPs) is the complexity of the physical properties involved. It requires analysis of carrier generation, thermalization, diffusion and recombination, as well as their interaction with the lattice phonons. The most common approach is based on extended two-temperature model~\cite{sivan2020ultrafast}, which already been actively used for describing ultrafast dynamics in metals~\cite{sivan2020ultrafast} and metallic nanostructures~\cite{dubi2019hot}. \MP{Mention more details}
%In our work, we developed a comprehensive theoretical approach incorporating various optically induced ultrafast physical effects in GaAs material and implemented a theoretically consistent numerical model that self-consistently solves carrier generation dynamics using Maxwell's equations.
%We describe the modulation of the optical properties of a semiconductor based on the Drude model, which considers the dielectric constant resulting from the presence of free electrons, and the band filling effect. Finally, by solving a set of differential equations that describe key parameters of the semiconductor (including the concentrations of thermalized and non-thermalized electrons, their energies, and the energy or temperature of both the phonon and electron systems) self-consistently with the transient changes in the dielectric constant, we obtain a comprehensive understanding of how the GaAs optical properties evolve under the action of ultrafast pulses.
\section{Theoretical model}
%\red{Description of the processes + a simple figure/scheme illustrating the model, references to the papers with models, equation, discussion of the model limitations and simplification(self-consistency?)}
%==========================FIGURE======================================
\textbf{Extended two-temperature model.} Modelling of optically induced transient structures requires comprehensive analysis of free carrier generation, thermalization, diffusion, and recombination, as well as their interaction with the lattice phonons. The most common approach is based on the extended two-temperature (eTT) model~\cite{sivan2020ultrafast}, which has already been actively used for describing ultrafast dynamics in metals~\cite{sivan2020ultrafast} and metallic nanostructures~\cite{dubi2019hot}. Here we utilize eTT to model the dynamics of nonequilibrium processes occurring within a GaAs film when subjected to ultrashort laser pulse irradiation. Specifically, generation of nonequilibrium electron and hole charge carriers are caused by optically induced interband transitions. While the detailed description of the theoretical model is provided in Supplemental Information, Section 1, here we will present the key aspects of the model.
The formed non-thermalized carriers are described by the concentration ${N}_{\mathrm{ e}}^{\mathrm{NT}}(\mathbf{r}, t)$ and corresponding energy $\mathcal{U}_{\mathrm{e}}^{ \mathrm{NT}}( \mathbf{r}, t)$ as shown in see Fig.~\ref{fig1_scheme}. The Dember effect~\cite{oguri2015dynamical}, which facilitates ambipolar diffusion of generated electrons and holes, enables us to assume that the evolution of charge carriers occurs in a nearly identical manner. Consequently, we can analyze our problem exclusively from the perspective of single charges, i.e. electrons. %${N}_{\mathrm{ e}}^{\mathrm{NT}},\mathcal{U}_{\mathrm{ e}}^{\mathrm{NT}}(\mathbf{r}, t)={N}_{\mathrm{ h}}^{\mathrm{NT}},\mathcal{U}_{\mathrm{h}}^{\mathrm{NT}}(\mathbf{r}, t)$.
The subsequent carriers thermalization results in formation of their quasi-equilibrium distribution with temperature $T_e(\mathbf{r}, t)$ and concentration ${N}_{\mathrm{ e}}^{\mathrm{T}}(\mathbf{r}, t)$. The further cooling of electron and hole subsystem due to interaction with phonons leads to increase of the lattice temperature $T_{ph}(\mathbf{r}, t)$. The model also accounts for non-thermalized and thermalized carrier diffusion and relaxation, as well as for heat generation and diffusion. One can see the characteristic times of mentioned processes occurring in the structure in Table~\ref{table2}.
\if 0
%============TABLE=======================================
\begin{figure}[h!]
\centering
\includegraphics[width=\columnwidth]{Figs/table.png}
% \caption{\MP{ 2) definition and discussion of $\tau_{diff}$ is missing;} The characteristic time scales of various ultrafast processes underlying the two-temperature model of the GaAs material sorted in ascending order. These values are defined for electron temperatures $T_e=300-10^4~\mathrm{K}$ and high-density electron-hole plasma $N_{e} = 10^{20}~\mathrm {cm^{-3}}$ taking into account the characteristic nonuniformity length scale $d \approx 1~{\mu \mathrm{m}}$ (See more details and a complete list of references in Supplemental Information Sec. 1).}
\end{figure}
\fi
%============TABLE=======================================
The approach is based on the system of coupled differential equations describing the key characteristics dynamics with a spatiotemporal resolution (below each characteristic is assumed with $(\mathbf{r}, t)$ dependence):
\begin{equation}
\begin{gathered}
\frac{\partial \mathcal{U}_{\mathrm{e}}^{\mathrm{NT}}}{\partial t}=\frac{1}{C_{\mathrm{e}}} \nabla\left[k_{\mathrm{e}}\nabla \mathcal{U}_{\mathrm{e}}^{\mathrm{NT}}\right]-\left(\Gamma_{\mathrm{e}}+\Gamma_{\mathrm{ph}}\right) \mathcal{U}_{\mathrm{e}}^{\mathrm{NT}}+Q_{\mathcal{U}_{\mathrm{e}}}, \\
\frac{\partial N_e^{\mathrm{NT}}}{\partial t}=Q_{{N_e}}+\nabla\left[D \nabla N_e^{\mathrm{NT}}\right]-\Gamma_{\mathrm{e}} N_e^{\mathrm{NT}},\\
\frac{\partial N_e^{\mathrm{T}}}{\partial t}=
\Gamma_e N_e^{\mathrm{NT}}
+ \nabla \left[D \nabla N_e^{\mathrm{T}}\right]-\\(\gamma_{nr} {N_e^{\mathrm{T}}+\gamma_{r} {N_e^{\mathrm{T}}}^{2}+\gamma_{Au} {N_e^{\mathrm{T}}}^{3})
},\\
\frac{\partial [C_e T_e]}{\partial t} = \nabla \left[k_e \nabla T_e\right] - G_{\mathrm{e}-\mathrm{ph}}[T_e-T_{ph}] +\Gamma_{\mathrm{e}} \mathcal{U}_{\mathrm{e}}^{\mathrm{NT}},\\
\frac{\partial [C_{ph}T_{ph}]}{\partial t} = \nabla[k_{ph} \nabla T_{ph}] + G_{\mathrm{e}-\mathrm{ph}}[T_e-T_{ph}] +\Gamma_{\mathrm{ph}}\mathcal{U}_{\mathrm{e}}^{\mathrm{NT}},
\end{gathered}
\label{eq_syst}
\end{equation}
Here $Q_{{N_e}}$ and $Q_{{\mathcal{U}_e}}$ represent the concentration and energy sources characterized by optical absorption at each point of the structure defined by the imaginary part of the dielectric permittivity $\varepsilon(\mathbf{r},t)$. The coefficients $C_{e/ph},\: k_{e/ph}, \:\mu_{e/ph}$ correspond to the electron/phonon heat capacity, thermal conductivity, and mobility~\cite{Schumann1991Jan, Derrien2011, BibEntry2001Jul}, respectively. Additionally, $\Gamma_e$ denotes the rate of energy exchange between non-thermal and thermal electrons~\cite{Hopfel1988Apr}, while $\Gamma_{\mathrm ph}$ is the rate of energy transfer between electrons and phonons~\cite{Sivan2020May}. The electron-phonon relaxation time is given by $G_{\mathrm{e}-\mathrm{ph}}$~\cite{Sivan2020May, Margiolakis2018Dec}, and $D$ is the coefficient for ambipolar heat diffusion~\cite{Ruzicka2010Dec}.
Model also accounts for
non-radiative decay $\gamma_{nr}$, radiative recombination $\gamma_{r}$ and Auger recombination $\gamma_{Au}$ in GaAs~\cite{Strauss1993Jan}.
\begin{table}[h]
\caption{ The characteristic time scales of various ultrafast processes underlying the two-temperature model of the GaAs material sorted in ascending order. These values are defined for electron temperatures $T_e=300-10^4~\mathrm{K}$ and high-density electron-hole plasma $N_{e} = 10^{20}~\mathrm {cm^{-3}}$ taking into account the characteristic nonuniformity length scale $d \approx 1~{\mu \mathrm{m}}$. Here, electron-phonon scattering is related to $\Gamma^{T_{e}}(N_e)=G_{\mathrm{e}-\mathrm{ph}}(N_e)/C_{e}(N_e)$ and $\Gamma^{T_{ph}}(N_e, T_{ph})=G_{\mathrm{e}-\mathrm{ph}}(N_e)/C_{ph}(T_{ph})$. The diffusion of electron concentration can be characterized by the concentration diffusion time $\tau_\mathrm{diff}^{N_{e}} = \frac{d^2}{4\pi^2D}$, while the heat diffusion coefficients for electrons and phonons are defined as $\tau_\mathrm{diff}^{T_{e/ph}} = \frac{d^2}{4\pi^2D_{e/ph}}$, where $D_{e/ph}=k_{e/ph}/C_{e/ph}$~\cite{block2019tracking}(See more details in Supplemental Information Sec. 1).}
\label{table2}
\centering
\begin{tabular}{| m{4cm} | m{2.2cm}| m{2.1cm}| }
\hline \centering
\footnotesize{\textbf{Effect}} & \centering\footnotesize{\textbf{Characteristic time scale}} & \quad \footnotesize{ \textbf{Value}}\\
\hline
\centering
\footnotesize{Thermalization of non-thermal electrons $\mathcal{U}_{\mathrm{e}}^{\mathrm{NT}}$} & \centering \footnotesize{$\tau_{e}=1/\Gamma_{e}(T_e)$} & \footnotesize{$\approx 200$ fs} \\
\hline
\centering
\footnotesize{Evolution of electron temperature $T_e$ due to electron-phonon scattering} & \centering \footnotesize{$1/\Gamma^{T_{e}}(N_e)$} & \footnotesize{$\approx 500$ fs} \\
\hline
\rule{0cm}{0.45cm}
\centering \footnotesize{ Diffusion of electron temperature $T_e$} & \centering \footnotesize{$\tau_\mathrm{diff}^{T_e}(d, T_e)$ } & \footnotesize{$\approx2$ ps - 52 fs} \\
\hline
\rule{0cm}{0.45cm}
\centering \footnotesize{Diffusion of electron concentration $N_e$} & \centering \footnotesize{$\tau_\mathrm{diff}^{N_e}(d, T_e)$ } & \footnotesize{ $\approx13$ ps - 390 fs} \\
\hline
\centering
\footnotesize{Evolution of phonon temperature $T_{ph}$ due to electron-phonon scattering } & \centering \footnotesize{$1/\Gamma^{T_{ph}}(N_e)$} & \footnotesize{$\approx 0.3$ ns} \\
\hline
\centering
\footnotesize{Energy transfer between non-thermal electrons and phonons} & \centering \footnotesize{$1/\Gamma_{ph}(N_e)$ } & \footnotesize{$\approx 0.3$ ns}\\
\hline
\rule{0cm}{0.45cm}
\centering
\footnotesize{ Diffusion of phonon temperature $T_{ph}$ }& \centering \footnotesize{ $\tau_\mathrm{diff}^{T_{ph}}(d)$} & \footnotesize{$\approx 80$ ns}\\
\hline
\end{tabular}
\end{table}
All coefficients in the system are dependent on the evolving parameters, which ultimately makes this approach complex and highly self-consistent. The self-consistency is also caused by the temporal modulation of dielectric permittivity and optical properties of structures, driven by the dynamics of carriers and phonons characteristics, which in terms changes the source functions $Q_{{N_e}}$ and $Q_{{\mathcal{U}_e}}$.
\textbf{Dielectric permittivity.} We account altering of the dielectric constant of the material via two main effects: formation of free-electron gas accounted within the Drude model~\cite{Sokolowski-Tinten2000Jan}, and band-filling effect~\cite{Bennett1990Feb} related to the occupation of the states at the bottom of the conductance band (top of the valence band) with the free carriers (see more details in Supplemental Information Sec. 2). Thus, the dielectric constant of has two contributions associated with the Drude model and band-filling effect:
\begin{align}
\varepsilon_\mathrm{fin}(\mathbf{r},t) = [(n_0+&\Delta n_{bf}(\mathbf{r},t)) +i(k_0+\Delta k_{bf})(\mathbf{r},t)]^2 +...\nonumber\\
&+\Delta\varepsilon_{Dr}(\mathbf{r},t),
\end{align} where $n_0 + ik_0$ is the initial complex refractive index
of GaAs~\cite{Papatryfonos2021Feb}, while the terms $\Delta n_{bf}(\mathbf{r},t)+i\Delta k_{bf}(\mathbf{r},t)$ and
$\Delta\varepsilon_{Dr} (\mathbf{r},t)$ represent the change of complex refractive index due to the band filling effect and the complex dielectric permittivity modulation based on Drude model, respectively.
Within the model, we also assume that dielectric constant $\varepsilon(\textbf{r}, t)$ varies in time slowly enough that we can consider the problem segregated manner and solving stationary Maxwell's equations at each time moment $t$. This approximation is valid for pulses of hundreds of femtosecond and optical systems with relatively low Q-factor, and self-consistent solution of Maxwell's equations along with a carrier dynamics equations may be required. However, our research indicates that accounting for this self-consistency in the context of ultrashort pulses (with femtosecond duration) is negligible, but for longer pulse duration the developed model is essential (See Sec. 4B in SI).
Finally, we implemented our theoretical model within the COMSOL Multiphysics simulation package (See Sec. 3 in SI) by linking Maxwell equations with diffusion equations describing carriers dynamics in a self-consistent manner. This allows us to explore the connection between the electromagnetic field distribution $\mathbf{E}(\mathbf{r}, t)$ within the semiconductor material and the evolution of the key parameters ($\mathcal{U}_{\mathrm{e}}^{ \mathrm{NT}}( \mathbf{r}, t),{N}_{\mathrm{ e}}^{\mathrm{NT}}(\mathbf{r}, t),{N}_{\mathrm{ e}}^{\mathrm{T}}(\mathbf{r}, t),{T}_{\mathrm{ e}}(\mathbf{r}, t),{T}_{\mathrm{ph}}(\mathbf{r}, t)$) resulting in the overall variation of the optical constants and change in optical properties of the photonic structure.
%==========================FIGURE======================================
\begin{figure}[h!]
\centering
\includegraphics[width=0.8\columnwidth]{fig2_v6.pdf}
\caption{(a) Interference of two pump beams forming a lattice with period $a$ in GaAs film of height $h$. The dynamics of non-thermalized $N_e^\mathrm{NT}$ (b) and thermalized $N_e^\mathrm{T}$ (c) electrons concentration, energy of non-thermalized electrons $\mathcal{U}_e^\mathrm{NT}$ and electron temperature $T_{e}$ (d) and phonon temperature $T_{ph}$ computed at the point O in (a). b) Evolution of real (d) and imaginary (e) parts of the dielectric permittivity correspondent to the wavelength 1600 nm and computed at point O. Drude model (black dashed line) and band filling model (red dashed line) contributions are shown along with their sum ('total', blue solid line). The Gaussian pump profile is shown with a dashed green line. }
\label{fig2_evolution}
\end{figure}
%==========================FIGURE======================================
\section{Transient grating formation in \text{GaAs} film}
We applied developed theoretical model and numerical approach to describe formation of a transient diffraction grating within a GaAs film with a height of $h=300$ nm on an Ag substrate. To achieve this, we excited the film using two 'pump' plane wave pulses with central wavelength $\lambda_\mathrm{pump} =500$ nm impinging the surface at angles $\theta_\mathrm{pump} =\pm13 ^\mathrm{o}$ as shown in Fig.~\ref{fig2_evolution} (a). The pulse has Gaussian profile $ \mathrm{GP}(t) =\mathrm{I_{{pump}}} \mathrm{exp} (-4 \cdot\mathrm{ln}2 \cdot t^2/\tau_\mathrm{p}^2)$ reaching the maximal intensity about $\mathrm{I_{pump}}= 10^{14}~\mathrm{W/m^2}$ that leads to significant evolution of the optical parameters of the film, while the pulse duration is set to $\tau_{\mathrm{p}}=100~$fs. These pump intensity and pulse duration correspond to a fluence of $\mathrm{F} = 1~\mathrm{mJ/cm^2}$, which is below the damage threshold in GaAs~\cite{di2020broadband,glezer1995laser,singh2002ripples}. The resulting periodical interference pattern triggers intense generation of non-equilibrium carriers. The period of this interference is $\mathrm{a}=1100$ nm corresponding to the angle of pump incidence of approximately $\mathrm{\theta}_{\mathrm{pump}} \approx \arcsin{({\lambda_\mathrm{pump}}/(2\mathrm{a}))}$.
%Furthermore, as the incident pumping radiation exhibit a Gaussian pulse shape with parameters $t_0 = 1$ ps and $\tau_p = 100$ fs, it enables modulation of the optical properties within the GaAs film on ultrashort time scales. To investigate this dielectric permittivity modulation caused by pumping mechanism, we analyze it through 'probe' irradiation. This excitation has significantly lower intensity compared to the pumping one, making its impact on the dynamics of key characteristics negligible. Thus, it is primarily utilized as a tool for examining the interaction of the incident pump radiation with the semiconductor structure.
In Fig.~\ref{fig2_evolution}, we plot the evolution of non-equilibrium carrier dynamics computed at one point close to the surface (point O in Fig.~\ref{fig2_evolution} (a)). At first, the absorbed energy of the pump pulse is transferred to the non-thermalized carriers with the rapid growth of their concentration $N_e^{NT}$ (up to the values about $10^{21}$ cm$^{-3}$, see red solid line in Fig.~\ref{fig2_evolution}(b)) and energy $\mathcal{U}_{\mathrm{e}}^{ \mathrm{NT}}$ (see red solid line in Fig.~\ref{fig2_evolution}(c)). After that, at the picosecond timescale, the carriers are being thermalized giving rise to $N_e^{T}$ concentration and carrier temperature $T_e$ (blue solid lines in Fig.~\ref{fig2_evolution}(b) and (c) correspondingly). The carrier temperature is increased up to the values of $8\cdot 10^4-9\cdot 10^4$ K and then gradually decreases after the end of the pump pulse due to electron-phonon interactions. At the same time, the phonon temperature increases for less than hundred degrees at this timescale (see blue dashed line in Fig.~\ref{fig2_evolution}(c)). A more detailed analysis can be found in Sec. 4A in SI.
Finally, the predicted increase of free carrier concentration results in a drastic change of the complex dielectric permittivity $\mathrm{Re ~\varepsilon_\mathrm{pr}}+i\mathrm{Im ~\varepsilon_\mathrm{pr}}$ at the probe wavelength $\lambda_{\text{pr}}=1600$ nm as shown in FigS.~\ref{fig2_evolution}(d) and ~\ref{fig2_evolution}(e).
At the first stage, non-thermalized electrons are generated immediately after the pump pulse arrival. These electrons subsequently undergo thermalization and diffusion, leading to a corresponding modulation of the dielectric constant. One can see that at the current pump intensity, the real part of the permittivity can be reduced for 4-6 units at time scale of 1 ps which constitute almost 50\% of the non-perturbed dielectric constant $\varepsilon^{0} = 11.4 +i0$~\cite{Papatryfonos2021Feb}. This variation is predominantly provided by the Drude contribution, while the band filling component is relatively small. The increase in the imaginary part of the permittivity is clearly related to generation of free-carriers, {as the impact of the band filling effect is zero for the probe wavelength of 1600 nm, which is higher than the band gap wavelength.} At the same time, above the band gap, at the pump wavelength $\lambda_{\text{pump}}=500$ nm for instance, both the Drude model and the band filling effect play a substantial role in modulating the dielectric constant of the material (see Sec.~2C in SI).
%==========================FIGURE======================================
\begin{figure}[t]
\centering
\includegraphics[width=\columnwidth]{fig3_v2.pdf}
\caption{The distribution of thermalized and non-thermalized electrons concentrations (left column) and real and imaginary parts of dieletric permittivity (right column) for probe wavelength $\lambda_{\mathrm{pr}}= 1600$ nm within the unit cell in GaAs film at different delay time.}
\label{fig3_spatial_evolution}
\end{figure}
%==========================FIGURE======================================
%Thus, we are able to all-optically create a temporal diffraction grating within the film and control it via 'probe' radiation on a very short timescale.
%==========================FIGURE===================================
\begin{figure*}[t]
\centering
\includegraphics[width=2\columnwidth]{fig4_v4.pdf}
\caption{(a) Reflectance map for the probe irradiation as a function of probe wavelength $\lambda_{\mathrm{pr}}$ and angle of incidence $\theta_{\mathrm{pr}}$ (frequency $\omega/\omega_{p} = a/\lambda_{\mathrm{pr}}$ and lateral wavenumber $k_{||}/k_0 = \sin (\theta_{\mathrm{pr}})$). The map corresponds to a fixed probe time $\mathrm{t_{pr}} = 0.2$ ps. The evolution of SPP dispersion over probe time is demonstrated through dashed lines for probe delay time $\mathrm{t_{pr}} =0, 0.2, 0.5$ ps. %Pink line refers to fixed probe wavelength $\lambda_{\mathrm{pr}}= 1600$ nm.
(b) The magnetic field distribution $\mathrm{H_z}$ near the GaAs/Ag interface at a probe delay time $\mathrm{t_{pr}} = 0.2$ ps for three specific excitation points labeled as A, B, and C in Fig.~\ref{fig4_SPP} (a)). The arrows indicate the direction of Poynting vector. (c) The reflectance dynamics for point A ($\lambda_{\mathrm{pr}} = 1600$ nm and $\mathrm{q}_{\mathrm{pr}} = 21.3^{o}$). The Gaussian pump profile is shown with a dashed green line. (d) Reflectance map of the probe beam as a function of probe delay time $\mathrm{t_{pr}}$ and normalized wavenumber $k_{||}/k_0$ for fixed probe wavelength $\lambda_{\mathrm{pr}}= 1600$ nm.}
\label{fig4_SPP}
\end{figure*}
%==========================FIGURE===================================
While previous simulations show the evolution of dielectric permittivity in time at the given point close to the film interface (point O in Fig.~\ref{fig2_evolution} (a)), it is quite insightful to trace the spatial distribution of generated free carriers and correspondent variation of the dielectric permittivity. The left column in Fig.~\ref{fig3_spatial_evolution} depicts the spatial distribution of the free carriers in a unit cell of the film at different time delays from 0 to 1 ps. One can that the intialy formed non-thermalized electrons are fully converted to thermalized electrons within 0.2 ps at the depth of around $h/2=150~\mathrm{nm}$, since the thermalization time $\tau_e\approx 200~\mathrm{fs}$ (See Table~\ref{table2}). The thermalized electrons undergo the following diffusion in the depth of the film. The variation of the real and imaginary part of the dielectric permittivity (right column in Fig.~\ref{fig3_spatial_evolution}) generally follows the free-carriers concentration forming an optical grating with high contrast. One can also notice that already at 1 ps delay the optical grating is almost vanished. Indeed, the grating contrast if defined by the inhomogeneity of the hot carriers distribution, at the same time within 1 ps the hot carriers become homogeneously distributed across the film driven by diffusion process (See Table~\ref{table2}). Note, that the dielectric permittivity of the film is far from the equilibrium ($\Re \varepsilon\approx5$) and it will be kept at this values on the timescale of free carrier recombination, around 5-10 ns. Thus, the lifetime of grating is much faster than the life time of free carriers and is defined by the carrier diffusion time $\tau_\mathrm{diff}^{N_e}$ (See Table~\ref{table2}).
\section{Excitation of SPPs}
The optically-induced diffraction grating formed within the GaAs film at picosecond timescale enables the ultrafast excitation of SPPs at the semiconductor/metal interface. As it is widely recognized, SPPs are tightly confined TM electromagnetic surface waves propagating along a metal-semiconductor interface with spectrum lying below the light cone~\cite{Zheng2019Oct}. Therefore, the induced diffraction grating ensures the quasi-phasematching condition and fulfills the quasi-wavevector conservation law, necessary for exciting SPPs from free space~\cite{Liang2015Nov} as shown in Fig.~\ref{fig1_scheme}:
\begin{equation}
\frac{2\pi}{a}+k_\mathrm{pr}\sin(\theta_\mathrm{pr})=k_{SPP}(\omega_\mathrm{pr}).
\label{eq:SPP}
\end{equation}
\noindent Here, $k_\mathrm{pr}=\omega_\mathrm{pr}/c$ is the wavevector of the incident probe, $\omega_\mathrm{pr}$ is the probe frequency, $c$ is the speed of light, $k_{SPP}(\omega_\mathrm{pr})$ is the dispersion relation of SPP at the probe frequency.
The excitation of SPPs can be observed in the reflectance spectra of the probe beam. For that we plotted the reflectance amplitude as function of the probe wavelength and incidence angle shown in Fig.~\ref{fig4_SPP} (a) at time delay of $t_{\text{pr}}=0.2$ ps after the pump pulse arrival. One can see a distinct dip in the reflectance amplitude corresponding to the excitation of SPP. The SPP dispersion according to Eq.\eqref{eq:SPP} is shown with a red dashed line for the time delay $t_{\text{pr}}=0.2$ ps. This time corresponds to the point of maximum variation in the real part of the dielectric permittivity $\Delta \mathrm{Re~\varepsilon_{pr}}$, as depicted in Fig.~\ref{fig3_spatial_evolution}.
The distribution of $\mathrm{H_z}$ field component for a fixed probe wavelength $\lambda_{\mathrm{pr}} = 1600$ nm and angle $\mathrm{\theta}_{\mathrm{pr}} = 21.3^{\mathrm{o}}$ related to the point A in Fig.~\ref{fig4_SPP}(a) is shown in Fig.~\ref{fig4_SPP}(b) with a clear signature of SPP mode. The temporal evolution of the reflectance amplitude for the same parameters of the probe wavelength and angle is shown in Fig.~\ref{fig4_SPP}(c) demonstrating ultrafast excitation of SPP with FWHM about 40 femtoseconds reaching almost zero reflectance. It is worth mentioning that nearly total reduction in reflectance was achieved by adjusting the film thickness of the GaAs film $h$ under fixed pump and probe irradiation conditions ensuring the critical coupling regime. Additionally, at the same angle of incidence $\theta_{\mathrm{pr}} = 21.3^{o}$ and probe wavelength $\lambda_{\mathrm{pr}} = 1360$ nm (point C) it is feasible to achieve SPP excitation propagating in the opposite direction along the metal-semiconductor interface. The reverse propagation of SPP is indicated by the Pointing vector orientation depicted by arrows in Fig.~\ref{fig4_SPP}(b) illustrating the energy flow along the interface of the structure. This figure also illustrates the magnetic field distribution $\mathrm{H_{z}}$ at normal incidence of the probing field (point B). The latter relates to the excitation of two oppositely directed SPPs, leading to the formation of a standing SPP wave.
Finally, in Fig.~\ref{fig4_SPP}(d), we observe that the evolution of the diffraction grating, driven by the diffusion and recombination of induced nonequilibrium carriers in the conduction band (Fig.~\ref{fig3_spatial_evolution}), causes a shift in the dispersion of the surface plasmon polariton towards shorter wavelength (see in more detail in Supplemental Information Sec. 4C).
This phenomenon opens up an unprecedented way for the ultrafast control over SPPs. Actually, when operating at a fixed wavelength $\lambda_{\mathrm{pr}}$ (for example, 1600 nm) and suitable angle of incidence $\mathrm{\theta}_\mathrm{pr}$ ($21.3^{\mathrm{o}}$), the phase matching with SPP is only permitted over the extremely short temporal window at around the intersection between horizontal and vertical dashed lines in Fig.~\ref{fig4_SPP}(d).
% \if 0
% \begin{figure*}[h!]
% \centering
% \includegraphics[width=1\columnwidth]{Figs/fig44}
% \caption{a) Reflectance map for the probe irradiation as a function of probe time $\mathrm{t_{pr}}$ and normalized wavenumber $k_{||}/k_0 = sin (\theta_{\mathrm{pr}})$ for fixed probe wavelegth $\lambda_{\mathrm{pr}}= 1600$ nm. b) The evolution of SPP dispersion over probe time $\mathrm{t_{pr}}$ in terms of normalized wavenumber $k_{||}/k_0 = sin (\theta_{\mathrm{pr}})$ and normalized frequency $\omega/\omega_{p} = a/\lambda_{\mathrm{pr}}$, where $a$ is the period of diffraction grating. Pink line refers to fixed probe wavelength $\lambda_{\mathrm{pr}}= 1600$ nm. c) The distribution of thermalized and non-thermalized electrons concentrations, as well as complex dieletric permittivity for probe wavelegth $\lambda_{\mathrm{pr}}= 1600$ nm within the film at different probe times $\mathrm{t_{pr}}.$}
% \label{fig4_SPP_evol}
% \end{figure*}
% \fi
\section{Conclusion}
We theoretically proposed a setup for the ultrafast generation of SPP waves at semiconductor film/metal interface by optically induced grating structure. The grating formed in a thin film of GaAs material is induced by the non-equilibrium carriers and exists at the timescales of carriers diffusion that opens an opportunity for ultrafast control over SPP below the picosecond time scale. Our results are based on a developed extended two-temperature self-consistent model that describes the ultrafast optically induced processes in GaAs film and semiconductors in general. In particular, it demonstrates that the optimal delay between the pump pulse generating the grating and the probe pulse exciting the SPP wave, as well as the optimal angle of probe pulse incidence, are fully defined by the carriers' dynamics and can be chosen in a wide range. Finally, we believe that our advanced theoretical framework concerning ultrafast semiconductor responses to pulsed electromagnetic radiation and proposed novel technique for ultrafast SSP control exhibit significant potential for diverse applications in all-optically controlled ultrafast devices.
\section{Acknowledgement}
The authors are thankful Yonatan Sivan and Zarina Sadrieva for fruitful discussions. The work was supported by the Federal Academic Leadership Program Priority 2030.
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