Nonlinear topological edge states, topological gap solitons, and self-induced topological edge states in nonlinear Su-Schrieffer-Heeger circuit lattices
Extracted source text · arXiv 2504.11964
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\begin{document}
\title{Self-induced topological edge states in a lattice with onsite nonlinearity}
\author{Rujiang Li$^{1}$}
\thanks{Corresponding author: {rujiangli@xidian.edu.cn}}
\author{Wencai Wang$^{1}$}
\author{Xiangyu Kong$^{1}$}
\author{Ce Shang$^{2}$}
\author{Yongtao Jia$^{1}$}
\author{Gui-Geng Liu$^{3,4}$}
\thanks{Corresponding author: {liuguigeng@westlake.edu.cn}}
\author{Ying Liu$^{1}$}
\author{Baile Zhang$^{5,6}$}
\thanks{Corresponding author: {blzhang@ntu.edu.sg}}
\affiliation{
$^1$National Key Laboratory of Radar Detection and Sensing, School of Electronic
Engineering, Xidian University, Xi'an 710071, China
}
\affiliation{
$^2$Aerospace Information Research Institute, Chinese Academy of Sciences, Beijing 100094, China
}
\affiliation{
$^3$Research Center for Industries of the Future, Westlake University, Hangzhou, 310030, China
}
\affiliation{
$^4$Department of Electronic and Information Engineering, School of Engineering, Westlake University,
Hangzhou, 310030, China
}
\affiliation{
$^5$Division of Physics and Applied Physics, School of Physical and Mathematical Sciences,
Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
}
\affiliation{
$^6$Centre for Disruptive Photonic Technologies, The Photonics Institute, Nanyang Technological
University, 50 Nanyang Avenue, Singapore 639798, Singapore
}
\begin{abstract}
Topological edge states typically arise at the boundaries of topologically nontrivial structures or at interfaces between regions with differing topological invariants. When topological systems are extended into the nonlinear regime, linear topological edge states bifurcate into nonlinear counterparts, and topological gap solitons emerge in the bulk of the structures.
Extensive studies of these two types of nonlinear states have been carried out, and
self-induced topological edge states localized at the physical boundaries of originally nontopological structures have also been discussed.
Unlike the previously reported self-induced topological transitions driven by nonlinear couplings, which are conceptually straightforward but less common in realistic interacting systems, here we experimentally realize self-induced topological edge states in a lattice with onsite nonlinearity. Leveraging the strong and tunable nonlinearity of electrical circuits, we systematically investigate the localized states in a nonlinear Su-Schrieffer-Heeger model. Besides revisiting the nonlinear topological edge states and topological gap solitons, we uncover a novel type of self-induced topological edge states which exhibit the hallmark features of linear topological edge states, including sublattice polarization, phase jumps, and decaying tails that approach zero. A distinctive feature of these states is the boundary-induced power threshold for existence. Our results are broadly applicable and can be readily extended to photonic and cold atomic systems, where onsite nonlinearities naturally arise from interparticle interactions. Our work unveils new opportunities for exploring novel correlated topological states of light and matter, and paves the way for the development of robust photonic devices and topological quantum computation.
\end{abstract}
\keywords{topological edge states; gap solitons; topological circuit;
nonlinear lattice; Su-Schrieffer-Heeger model.}
\maketitle
Topological insulators are physical structures that behave
as conventional insulators in the bulk, but conducting
on their surfaces due to the existence of topologically
protected edge states \cite{RMP82-3045,RMP83-1057}. The realization of topological
insulators has been demonstrated in diverse physical
platforms, and the immunity of topological edge states to
local deformations and disorders are of great significance
for the exciting potential applications \cite
{NRP4-184,NRP1-281,NRM7-974,RMP91-015005,NRP5-483,NRP3-520,
RMP96-021002,nphoton8-821,nphoton11-763,RMP91-015006}.
Extending topological insulators into the nonlinear regime such as
by considering the nonlinear response of optical materials
under high field intensity \cite{APR7-021306,NP20-905}, the interplay between
topology and nonlinearity leads to the formation of the nonlinear topological
edge states which bifurcate from the linear edge states
and inherit topological protection from the linear counterparts \cite{PRA90-023813,PRA94-021801,optica3-1228,
PRL119-253904,PRL121-163901,PRB102-115411,OL45-6466,nphys18-678,PRL128-093901,PRE104-054206,PRB104-235420,
LSA9-147,science372-72}.
In two-dimensional topological systems, due to the modulation instability,
the nonlinear edge states develops into the edge solitons where dispersion is
balanced with nonlinearity \cite{PRA90-023813,PRA94-021801,optica3-1228,PRL117-143901,
ACSPhoton7-735,ncommun11-1902,PRX11-041057,
PRB106-195423}. The bifurcation from the linear
topological states to the nonlinear ones is also applicable to the nonlinear higher-order
topological systems, where nonlinear corner states are proposed
\cite{PRB104-235420,nphys17-995,LSA10-164}.
Topological gap solitons,
which are self-localized topological states in the bulk with their spectra
lie within the topological band gap, are also discovered
in nonlinear topological systems \cite{PRB102-115411,nphys18-678,PRL111-243905,PRL118-023901,
PRA98-013827,LPR13-1900223,arxiv1904-10312,science368-856,CP5-275}.
Although the topological gap solitons have no direct linear counterparts, they exhibit the
similar proprieties of the linear topological edge states,
such as the sublattice polarization \cite{nphys18-678,PRL118-023901,LPR13-1900223}
and unidirectional transport \cite{PRL111-243905,science368-856}.
In contrast to the conventional lattice solitons which are self-localized due to the balance
between coupling (commonly refereed as diffraction in photonic systems) and nonlinearity,
and thus are nontopological \cite{RMP83-247,PR463-1},
the topological gap solitons are localized at the nonlinearity-induced
topological interfaces and their formation may be interpreted as the
Jackiw-Rebbi Dirac boundary modes where mass inversion occurs across the interface
\cite{PRA98-013827,LPR13-1900223,CP5-275}.
\begin{figure}[tbp]
\includegraphics[width=8.6cm]{fig1.pdf}
\caption{\textbf{Schematics of the nonlinear SSH circuit.}
\textbf{a,} Circuit implementation of the SSH lattices.
The back-to-back varactor diodes provides the onsite nonlinearity of the SSH model.
\textbf{b,} Unit cell of the experimentally realized circuit lattices.
}
\label{fig1}
\end{figure}
Following the implementation in an optical platform \cite{nanophotonics14-769},
here, we investigate the topological states in the Su-Schrieffer-Heeger (SSH)
model with onsite nonlinearity using electrical circuits \cite{PRL42-1698}. Due
to the flexibility of constructing the circuit
lattices and the phase-resolved measurement technique, electrical circuits
are particularly suited to probe the nonlinear topological physics
\cite{nelectron1-178, ncommun10-1102,PRL123- 053902,PNAS118-e2106411118,
PRResearch5-L012041}. Under a weak pump (i.e., in the
linear limit), topological edge state appears at the edge of the topological SSH lattice
(ending with strong bond).
With the increasing of pump intensity, we observe the nonlinear topological edge states
bifurcated from the linear counterpart.
We experimentally validate the inherited properties of sublattice polarization and phase jump,
and find that nonlinearity weakens the localization of the topological edge states.
We then implement a structure by connecting two SSH lattices
with different topological properties. Due to the formation of the domain
wall, under a weak pump topological edge state appears as well. We experimentally reveal the
similar state properties under increased pump intensity, because the nonlinear topological
edge states have the same physical origin.
Different to the nonlinear topological edge states, topological gap solitons have no direct
linear counterparts. For an SSH lattice, no matter the lattice is topological
or nontopological in the linear limit, under the external pump, a nonlinearity-induced domain
wall appears in the
bulk and supports the formation of topological gap solitons. We experimentally observe that
the left and right tails of the topological gap solitons have opposite sublattice polarizations,
and reveal that nonlinearity increases the localization of the topological gap solitons.
These features are in contrast to those of nonlinear topological edge states because
the physical origins are totally different.
Besides the nonlinear topological edge states and topological gap solitons, we discover
both theoretically and experimentally
an exotic type of topological states residing at the edge of a semi-infinite lattice
ending with strong bond.
Although the lattice is nontopological in the linear limit, under the action of onsite
nonlinearity, it supports the self-induced topological
edge states that reside at the physical termination of the structure \cite{PRL127-184101}.
The self-induced edge states exhibit the sublattice polarization and
phase jump starting from the second site close to the edge.
They are the variant of the topological gap solitons
under the breaking of the discrete translational symmetry at the structure edge,
along with a boundary-induced power threshold for their existence.
Specifically, the self-induced topological edge states
can be approximately mapped to
the linear topological edge state of a semi-infinite SSH lattice.
Unlike the previously reported self-induced topological transitions driven by nonlinear
couplings \cite{nelectron1-178},
which are conceptually straightforward but less common in realistic interacting systems,
our self-induced topological edge states are realized in a lattice with onsite nonlinearity
and feature decaying tails that approach zero, in contrast to the nonlocalized distributions
that maintain non-zero plateau levels \cite{nelectron1-178}.
Our results are broadly applicable and can be readily extended to photonic and cold atomic
systems, where onsite nonlinearities naturally arise from interparticle interactions.
Our work unveils new opportunities for exploring novel correlated topological states of
light and matter, and paves the way for the development of robust photonic devices
and topological quantum computation.
\newline
\noindent \textbf{Results}
\noindent \textbf{Nonlinear SSH model realized using electrical circuits.} All
the nonlinear SSH lattices can be realized
using electrical circuits. Fig. \ref{fig1}a shows the circuit implementation of a unit cell,
where A and B denote the two sublattice sites. For one
sublattice, the inductor $L_{\text{g}}$, capacitor $C_{\text{g}}$, and
back-to-back varactor diode $C_{\text{v}}$ are wired in parallel. The
varactor diode acts as a voltage-dependent variable capacitor with $C_{\text{%
v}}=C_{\text{L}}+C_{\text{NL}}$, where the linear part $C_{\text{L}}$ is the
capacitance at the zero voltage and the nonlinear part can be
phenomenologically written as $C_{\text{NL}}=-C_{\text{L}}+\frac{C_{\text{L}}%
}{\left( 1+\left\vert v/v_{0}\right\vert \right) ^{M}}$
(see Supplementary Note 1).
Here, $v_{0}$ and $M$
are constants, and $v$ is the voltage amplitude. The
sublattice sites are wired with each other through the intracell coupling
capacitor $C_{1}$ and intercell coupling capacitor $C_{2}$.
\begin{figure*}[tbp]
\includegraphics[width=17.5cm]{fig2.pdf}
\caption{\textbf{Nonlinear topological edge states.}
\textbf{a,} Nonlinear topological edge states residing at the edge of a semi-infinite
SSH lattice that ends with a weak bond. Participation ratio measures the state localization.
The inset shows a typical voltage distribution of the nonlinear topological edge states.
\textbf{b,} At different input voltages, the voltage spectra measured experimentally and calculated theoretically.
\textbf{c,} The normalized amplitudes (left) and phases (right) of the experimental voltage distributions
at the resonant frequencies indicated by the dots in (\textbf{b}).
\textbf{d-f,} Results for the nonlinear topological edge states in a structure formed by connecting two lattices
with different topological properties in the linear limit.
}
\label{fig2}
\end{figure*}
For a typical SSH circuit that emulates the lattice shown in Fig. \ref{fig1}a,
it can be described by the discretized Gross-Pitaevskii equation:
\begin{eqnarray}
\text{i}\frac{d}{dt}\left[
\begin{array}{c}
V_{m}^{\text{A}} \\
V_{m}^{\text{B}}%
\end{array}%
\right] &=&E_{0}\left[
\begin{array}{c}
V_{m}^{\text{A}} \\
V_{m}^{\text{B}}%
\end{array}%
\right] +J_{1}\left[
\begin{array}{c}
V_{m}^{\text{B}} \\
V_{m}^{\text{A}}%
\end{array}%
\right] +J_{2}\left[
\begin{array}{c}
V_{m-1}^{\text{B}} \\
V_{m+1}^{\text{A}}%
\end{array}%
\right] \notag \\
&&+\left[
\begin{array}{c}
g\left(V_{m}^{\text{A}}\right){V_{m}^{\text{A}}} \\
g\left(V_{m}^{\text{B}}\right){V_{m}^{\text{B}}}%
\end{array}%
\right] , \label{gp}
\end{eqnarray}%
where $\left[ V_{m}^{\text{A}} \left(t\right),
V_{m}^{\text{B}} \left(t\right) \right]^{\text{T}}$ are the time-dependent voltages
on sites A and B in the $m$th unit cell,
$E_{0}={\omega _{0}+}\Delta E$ is equivalent to the constant onsite energy,
which includes the resonant frequency of the linear oscillators
$\omega _{0}=1/\sqrt{L_{\text{g}}\left( C_{%
\text{g}}+C_{\text{L}}\right) }$ and the frequency shift induced by the coupling capacitors
$\Delta E=-\frac{{C}_{1}+{C}_{2}}{2\left( C_{\text{g}}+C_{\text{L}%
}\right) }{\omega _{0}}$, $J_{1}=\frac{{C}_{1}}{2\left( C_{\text{g}}+C_{%
\text{L}}\right) }{\omega _{0}}$ and $J_{2}=\frac{{C}_{2}}{2\left( C_{\text{g}}+C_{%
\text{L}}\right) }{\omega _{0}}$ are the intracell and intercell coupling coefficients,
respectively, and $g\left( {V_{m}^{\sigma }}\right) =-%
\frac{C_{\text{NL}}\left( {V_{m}^{\sigma }}\right) }{2\left( C_{\text{g}}+C_{%
\text{L}}\right) }{\omega _{0}}$ $\left( \sigma = \text{A}, \text{B} \right)$ is the
voltage-dependent
onsite energy. Eq. (\ref{gp}) is valid under $C_{1,2}\ll C_{\text{g}}+C_{\text{L}}$
and $C_{\text{NL}}\ll C_{\text{g}}+C_{\text{L}}$, where the slowly-varying
envelope approximation holds (see Supplementary Note 2 for the derivation from
the Kirchhoff circcuit equations). Thus, the nonlinear circuit lattice realizes
the SSH model with onsite nonlinearity, and the four lattice configurations all can be implemented based on the circuit dimer in Fig. \ref{fig1}a.
Fig. \ref{fig1}b shows the unit cell of the experimentally realized circuit lattices.
\newline
\noindent \textbf{Nonlinear topological edge states.} We first study the nonlinear topological
states in the first SSH lattice. The configuration is a typical semi-infinite
SSH lattice that ends with a weak bond. In the linear limit, due to the nontrivial topology with
the winding number $\mathcal{W}=1$, topological edge state residing at the left edge
exists \cite{PRL42-1698}. Under the action of the onsite nonlinearity, by bifurcating from
the linear edge state,
nonlinear topological edge states with the topological protection inherited from the
linear counterpart appear (see Methods for the algorithm and Supplementary Note 3
for the stability analysis). As depicted in Fig. \ref{fig2}a,
with the power increasing (defined as the sum of the squares of all the site voltages),
the frequency of the nonlinear edge state exhibits a blue shift due to the
decreased grounding capacitance, and the state localization becomes weak with a larger
participation ratio defined as $( \sum\limits_{m,\sigma} \vert v_{m}^{\sigma} \vert ^{2} )^{2}
/\sum\limits_{m,\sigma} \vert v_{m}^{\sigma} \vert ^{4}$ ($\sigma = \text{A}, \text{B}$),
particularly when the frequency enters the linear bulk band (denoted by the shaded gray areas).
The inset of Fig. \ref{fig2}a shows a typical profile of the nonlinear edge states. Since the
nonlinear edge states are bifurcated from the linear counterpart which satisfies
$v_{m}^{\text{A}} = \left(- \frac{J_{1}}{J_{2}} \right)^{\vert m \vert} v_{0}^{\text{A}}$
and $v_{m}^{\text{B}}=0$, their voltages mainly distribute on
sublattice site A with the sublattice pseudospin
\begin{equation}
S=\frac{\sum\limits_{m}\left\vert v_{m}^{\text{A}}\right\vert
^{2}-\left\vert v_{m}^{\text{B}}\right\vert ^{2}}{\sum\limits_{m}\left\vert
v_{m}^{\text{A}}\right\vert ^{2}+\left\vert v_{m}^{\text{B}}\right\vert ^{2}}
\label{sp}
\end{equation}%
nearly equal to $1$ and the phase jump of $\pi $ among the neighboring cells.
Experimentally, we excite site $1$ of the circuit lattice using an external input voltage with
frequency sweep to observe the nonlinear topological edge states
(see Methods and Supplementary Note 4 for the experimental implementation).
From the experimental and theoretical results shown in Fig. \ref{fig2}b, under a small input voltage,
the voltage spectrum exhibits a nearly symmetric peak with respect to the resonant frequency,
indicating the presence of the topological
edge state in the linear limit. As the input voltage increases, the spectrum
peak becomes asymmetric and the resonant frequency exhibits a blue shift
(see Supplementary Note 4 for the complete voltage spectra).
We further extract the resonant frequencies under different input voltages and measure
the voltage distributions in the circuit lattice. The normalized amplitudes and phases of the
experimental voltage distributions are shown in Fig. \ref{fig2}c. At higher input voltages,
the localization of the nonlinear edge state decreases, although the characteristics of
sublattice polarization and phase jump remain intact (see Supplementary Note 4 for
the quantitative analysis). This observation aligns with the theoretical prediction and
confirms that nonlinearity weakens the localization of the nonlinear topological edge states.
We then study the second configuration. The structure is connected
by two lattices with different topological properties defined
in the linear limit (winding number $\mathcal{W}=0$ for the left
nontopological part and $\mathcal{W}=1$ for the right topological part \cite{PRB84-195452}).
Without nonlinearity, a topological edge state
is localized at the boundary between the two parts \cite{ncommun6-6710,ncommun3-882}.
Similarly, with onsite nonlinearity,
nonlinear topological edge states which are bifurcated from the linear edge state
appear, as shown in Fig. \ref{fig2}d (see Supplementary Note 5 for the stability analysis).
Due to the same physical origin, the nonlinear topological edge states in this lattice also
exhibit the sublattice polarization and phase jump, and nonlinearity also weakens the
state localization. These properties are confirmed by the experimental measurements
presented in in Figs. \ref{fig2}e-f (see Supplementary Note 6 for the experimental
implementation, complete voltage spectra, and quantitative analysis). Note that the
nonlinear topological edge states are completely
different from the nontopological conventional solitons that do not
possess these characteristics (see Supplementary Notes 5 for the
nontoplogical edge states).
\newline
\begin{figure}[tbp]
\includegraphics[width=8.6cm]{fig3.pdf}
\caption{\textbf{Topological gap solitons.}
\textbf{a,} Frequencies and participation ratios of the topological gap solitons.
The inset shows a typical voltage distribution of the topological gap solitons.
\textbf{b,} Voltage spectra measured experimentally and calculated theoretically.
\textbf{c,} The normalized amplitudes (left) and phases (right) of the experimental voltage distributions
at the resonant frequencies indicated by the dots in (\textbf{b}).
}
\label{fig3}
\end{figure}
\noindent \textbf{Topological gap solitons.} We will now discuss the topological gap
solitons in the third kind of the lattice. In contrast to the nonlinear topological edge states,
the topological gap solitons lack a direct linear counterpart, although they reside spectrally within
the SSH gap. From Fig. \ref{fig3}a, the topological
gap solitons bifurcate from the edge of the linear Bloch band and converge to the bulk state
in the linear limit (see Supplementary Note 7 for the bifurcation and stability).
Under the influence of onsite nonlinearity, a topological interface can be induced at the center
unit cell of the
lattice \cite{PRA98-013827,LPR13-1900223}. The Dirac mass defined as $m_{\text{Dirac}} =
\frac{g\left( V_{m}^{A} \right) - g\left( V_{m}^{B} \right)}
{2}$ exhibits an inversion ($m_{\text{Dirac}} >0$ for the left part and $m_{\text{Dirac}}<0$
for the right part),
and the topological gap solitons emerge as the Jackiw-Rebbi-type Dirac boundary modes
(see Supplementary Note 7 for the physical interpretation). The nonlinearity-induced
interface can also be interpreted as an impurity potential that splits the the original lattice into
two topological regions, and the topological gap soliton represents a combination of the two
topological edge states \cite{PRB102-115411}.
The global sublattice polarizations of the topological gap solitons vanish because the left
and right tails exhibit opposite chiralities \cite{nphys18-678}. From the inset in Fig. \ref{fig3}a,
the left tail is primarily confined to the sublattice site $\text{A}$, exhibiting a positive
local sublattice pseudospin $S_{\text{L}}$, while the right tail displays a negative $S_{\text{R}}$.
Experimentally, the topological gap solitons are excited using two out-of-phase input voltages,
revealing the properties of both sublattice polarization and phase jumping, as shown
in Figs. \ref{fig3}b-c (see Supplementary Note 8 for the comprehensive analysis and excitation
of nontopological gap solitons). The small deviations in the voltage distributions from the
perfectly symmetric profiles may result from imperfections in the circuit lattice and input voltages,
as well as the limited temporal resolution in measurements (see Methods).
Furthermore, since the topological gap solitons are nonlinearity-induced states, their localization
is enhanced under stronger input voltages, provided that the delocalized gap solitons within the
linear bulk band are not excited (see Supplementary Note 7).
\newline
\begin{figure}[tbp]
\includegraphics[width=8.6cm]{fig4.pdf}
\caption{\textbf{Self-induced topological edge states.}
\textbf{a,} Frequencies and participation ratios of the self-induced topological edge states.
For comparison, the frequencies of the topological gap solitons are also plotted.
The inset shows a typical voltage distribution of the self-induced topological edge states.
\textbf{b,} Voltage spectra measured experimentally and calculated theoretically.
\textbf{c,} The normalized amplitudes (left) and phases (right) of the experimental voltage distributions
at the resonant frequencies indicated by the dots in (\textbf{b}).
}
\label{fig4}
\end{figure}
\noindent \textbf{Self-induced topological edge states.}
The nonlinear topological states we currently implement rely on a topological edge,
whether it is the physical termination of a lattice or a topological interface induced by
nonlinearity. Hereafter, we turn to a semi-infinite lattice ending with a strong bond,
and show the emergence of an exotic type of nonlinear topological states that
reside at the edge of a nonlinear nontopological lattice.
Fig. \ref{fig4}a shows the frequencies and participation ratios of the self-induced topological
edge states. Although topological edge states do not exist in the linear limit, above a certain power
threshold, localized states with their maxima reside at the leftmost unit cell (see the inset of Fig. \ref{fig4}a)
appear in the SSH gap. Neglecting the voltage at the first site, the self-induced edge state exhibits
the similar profile with the nonlinear topological edge state (the inset of Fig. \ref{fig2}a) and
half of the topological gap soliton (the inset of Fig. \ref{fig3}a). Considering the similarity, the self-induced
topological edge states at the left edge can be created by the discrete translational transformation
$\mathcal{T} V_{m}^{\text{A}, \text{B}} = V_{m-1}^{\text{A}, \text{B}}$, where
$\mathcal{T}$ is the translational operator. The power threshold is induced by the
breaking of discrete translational symmetry when moving the topological gap solitons towards
the edge (see Supplementary Note 9 for the
relation between self-induced topological edge states and topological gap solitons).
Since the circuit nonlinearity adds perturbations to the onsite energy, the self-induced topological
edge states
can be approximated using the solutions of Eq. (\ref{gp}) with $g \ne 0$ for the leftmost unit cell
and $g=0$ for the other sites. When the state frequency equals to the constant
onsite energy $E_{0}$, i.e., the frequency of the linear topological edge state, the
Gross-Pitaevskii equation reduces to
\begin{eqnarray}
J_{1}v_{1}^{\text{B}}+g\left( v_{1}^{\text{A}}\right) v_{1}^{\text{A}} &=&0, \label{ac1}\\
J_{1}v_{1}^{\text{A}}+g\left( v_{1}^{\text{B}}\right) v_{1}^{\text{B}} &=&0, \label{ac2}
\end{eqnarray}
with $v_{m}^{\text{B}} = \left(- \frac{J_{1}}{J_{2}} \right)^{\vert m \vert -1} v_{1}^{\text{B}}$
and $v_{m}^{\text{A}}=0$ for $m \geq 2$ (see Supplementary Note 9).
Eqs. (\ref{ac1})-(\ref{ac2}) govern the voltage distributions
in a single dimer and allow for an antisymmetric solution: $v_{1}^{\text{A}} = -v_{1}^{\text{B}}$
with $g \left( v_{1}^{\text{A}} \right) = J_{1}$, which is consistent with the profile shown
in the inset of Fig. \ref{fig4}a.
The relationship between the voltages at the other sites is precisely analogous to that of a linear
topological edge state.
Thus, the self-induced topological edge states at a nontopological edge represent a continuation of
the antisymmetric state in the anti-continuum limit (see Supplementary Note 9), and they can
be approximately mapped to the linear topological edge state of a semi-infinite SSH lattice.
To experimentally probe the self-induced topological edge states, we excite the
leftmost site, specifically site $1$ of the circuit lattice. From Fig. \ref{fig4}b, no peak is observed
in the SSH gap for $V_{\text{input}} = 20~\text{V}$,
indicating the presence of a power threshold for the self-induced topological edge states.
The threshold value obtained from the excitation spectra deviates from the result in
Fig. \ref{fig4}a possibly due to the excitation
of other nonlinear states (see Supplementary Note 10). At high input voltages, the voltage
distributions in Fig. \ref{fig4}c reveal that the self-induced topological edge states exhibit
sublattice polarization and phase jump starting from the second site near the physical termination.
Meanwhile, similar to the topological gap solitons, nonlinearity can enhance the localization of
self-induced topological edge states, unless the resonant frequency is driven into the linear
bulk band, which is consistent with the theoretical prediction in Fig. \ref{fig4}a. Note that
the resonant peak in the semi-infinite gap in Fig. \ref{fig4}b corresponds to the excitation of
nontopological conventional solitons (see Supplementary Note 10 for the discussion on
nontoplogical edge solitons).
\newline
\noindent \textbf{Conclusion.} This work experimentally and theoretically reveals the
existence of the nonlinear topological edge states and topological gap solitons in
SSH circuit lattices. Contrary to the conventional understanding of the bulk-boundary
correspondence, we demonstrate the formation of the self-induced topological edge
states that reside at the physical termination (rather than the nonlinearity-induced
interface) of a nonlinear nontopological lattice.
This exotic type of nonlinear topological states may pave the way to exploring intriguing
topological states in more complex nonlinear topological systems, such as high-dimensional
or higher-order systems, and the platform of nonlinear electrical circuits may be used
to explore the interacting topological physics \cite{ncommun13-2392} (see Supplementary
Note 2).
\newline
\noindent \textbf{Methods}
\noindent \textbf{Sample fabrication and measurement.} The circuit parameters in the
four SSH circuits are $C_{\text{g}}=4.7~\text{nF}$,
$L_{\text{g}}=15~\mu\text{H}$, $C_{\text{L}}=73.48~\text{pF}$, $v_{0}=2.1935$,
and $M=0.4548$. For the first lattice, the intracell and intercell
coupling capacitors are $C_{1}=180~\text{pF}$ and $C_{2}=560~\text{pF}$,
respectively. For the second lattice, the topological part has
$C_{1}=180~\text{pF}$ and $C_{2}=560~\text{pF}$, while the nontopological part
has $C_{1}=560~\text{pF}$ and $C_{2}=180~\text{pF}$. An additional capacitance
$C_{2}-C_{1}$ is added to the grounding capacitance of the interface circuit node.
For the third and fourth lattices, the intracell and intercell
coupling capacitors are $C_{1}=560~\text{pF}$ and $C_{2}=180~\text{pF}$,
respectively.
To ensure the
observation of nonlinear topological states, the circuit components should have
minimal parasitic parameters, and their tolerance should be as low as possible.
For this purpose, we utilize capacitors with low ESL and $\pm 1\%$ tolerance.
We also employ inductors with magnetic shielding and low DCR, and delicately
select the components using an LCR meter (HIOKI
IM3536). The tolerances for inductance and series resistance are $\pm 1\%$
and $\pm 2\%$, respectively. The average series resistance of the inductors is
approximately $600~\text{m}\Omega$; however, it increases with higher frequencies
and larger currents. To characterize the voltage response of
varactor diodes (BB201), we measure the $C$-$V$ curves and the parameters $%
C_{\text{L}}$, $v_{0}$, and $M$ are obtained by fitting these curves with the
phenomenological formula.
We use standard PCB techniques to fabricate the
lattice, ensuring that the inductors are sufficiently spaced to prevent mutual coupling.
The PCB traces have a relatively large width of $0.75~\text{mm}$ to accommodate
high currents, and the layouts are carefully optimized to minimize parasitic parameters
and coupling with other circuit components.
To excite the circuit lattices, SMA connectors are soldered onto PCB for signal
injection from an arbitrary function generator (Tektronix AFG31022). Since
the output voltage of an arbitrary function generator is typically low, we utilize a
high voltage amplifier (Aigtek ATA-2022B) to amplify the voltage signals.
However, due to bandwidth limitations, the output voltage of the high voltage
amplifier may be lower than the preset value at high operating frequencies.
Additionally, the output voltages of the independent channels may contain errors.
To detect the voltage signals at the circuit nodes, home-made connectors on the
PCB are connected to an oscilloscope (Tektronix MDO34).
%To ensure the
%measurement accuracy of small voltage signals, we use a passive probe
%with 1X attenuation that provide a high voltage resolution.
For the excitation spectrum measurement, we fix the input voltage and conduct
program-controlled frequency sweeps, during which the voltage signals at the
circuit nodes are recorded.
%with a frequency step of $250~\text{Hz}$.
%The case where the input voltage is $1~\text{V}$ is treated as the non-interacting limit.
%Then from $10~\text{V}$ we change the input voltage with a step of $10~\text{V}$ until
%the voltage reaches $100~\text{V}$.
%and the complex amplitudes are obtained after performing Fourier transforms.
%To show the bistable response between the input voltage
%and voltage at the circuit node, we fix the excitation frequency and perform
%program-controlled voltage sweeps with a voltage step of $1~\text{V}$.
%Note that both the frequency and voltage sweeps should be performed
%at a low speed in order to get the steady state response of the circuit
%lattices.
\noindent \textbf{Theoretical calculations.} To calculate the
frequencies and voltage distributions of the nonlinear topological states, we
solve the Gross-Pitaevskii equation [i.e., Eq. (\ref{gp})] using the ansatz $%
V_{m}^{\text{A,B}}=v _{m}^{\text{A,B}}\exp \left( -i\omega t\right)$.
We employ Newton's method to solve the eigenvalue
equation for each $\omega$. Open boundary conditions are used to truncate
the nonlinear circuit lattice. For the calculation of the nonlinear topological
edge states, the linear topological edge states with scaling factors are taken
as initial guesses. To calculate the topological gap solitons,
self-induced topological edge states, and other nontopological solitons,
we employ the anti-continuum approach. Once we obtain the soliton solution
at a given $\omega$, solutions at other frequencies can be obtained iteratively.
The stability of the nonlinear topological states is analyzed using the standard linear
stability technique and subsequently confirmed through temporal evolution
based on the Runge-Kutta algorithm.
The excitation spectra are calculated by solving the driven-dissipative
Gross-Pitaevskii equaiton. Dissipation is characterized by $\gamma$ at the input
node and $\gamma_{L}$ at the other nodes. Newton's method is employed to
find the complex solutions. We calculate the voltage distributions at two frequencies
away from the resonant frequencies, and use these solutions as initial guesses to
obtain the entire spectrum. Finally, for a fixed driving voltage, we obtain two voltage
spectra: one curve is obtained by increasing the driving frequency, while the other
corresponds to a frequency sweep in the opposite direction. The bistable response
can be observed by comparing the two voltage spectra.
\newline
\noindent \textbf{Acknowledgements}
\noindent R.L., W.W. and X.K. was sponsored by the National Key Research and Development
Program of China (Grant No. 2022YFA1404902) and National Natural Science
Foundation of China (Grant No. 12104353). Y.L. was sponsored by the National
Natural Science Foundation of China (NSFC) under Grant No. 61871309 and the
111 Project. B.Z. acknowledges support from Singapore National Research Foundation
Competitive Research Program Grant No. NRF-CRP23-2019-0007, Singapore Ministry of
Education Academic Research Fund Tier 2 Grant No. MOE-T2EP50123-0007, and Tier 1
Grant No. RG81/23.
\newline
\noindent \textbf{Author contributions}
\noindent R.L. conceived the idea and performed the theoretical calculations.
R.L. and W.W. designed and conducted the experiments with the help of X.K. and Y.J.
R.L., X.K., C.S., G.-G.L. and B.Z. wrote the manuscript.
R.L., Y.L. and B.Z. supervised the project.
\newline
\noindent \textbf{Competing interest}
\noindent The authors declare no competing financial interest.\newline
\noindent \textbf{Data availability}
\noindent The data that support the findings of this study are available from the
corresponding authors upon reasonable request.
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\end{document}