Double quantum spin Hall phase in bilayer ZrTe$_5$
Extracted source text · arXiv 2606.18130
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\title{Double quantum spin Hall phase in bilayer ZrTe$_5$}
\author{Chao Chen Ye}
\email{c.chen.ye@rug.nl}
\affiliation{Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 3, 9747 AG Groningen, The Netherlands}
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\author{G{\'a}bor Kalla}
\affiliation{Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 3, 9747 AG Groningen, The Netherlands}
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\author{Jianting Ye}
\affiliation{Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 3, 9747 AG Groningen, The Netherlands}
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\author{Jagoda S{\l}awi{\'n}ska}
\email{jagoda.slawinska@rug.nl}
\affiliation{Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 3, 9747 AG Groningen, The Netherlands}
\keywords{\textbf{}Topological insulators, 2D materials, quantum spin Hall effect, double quantum spin Hall effect, even spin Chern insulator, van der Waals materials}
\begin{abstract}
Quantum spin Hall insulators (QSH) are topological materials that host helical edge states protected against backscattering, making them ideal candidates for dissipationless spin transport. Within the conventional $\mathbb{Z}_2$ classification, only phases with an odd number of edge state pairs ($\mathbb{Z}_2 = 1$) are topologically nontrivial, whereas even-channel systems ($\mathbb{Z}_2 = 0$) lie beyond this framework but can host robust edge transport characterized by a spin Chern number. Experimentally accessible realizations of such phases remain rare, particularly in systems with sizeable band gaps. Here, we show that bilayer ZrTe$_5$ realizes a double quantum spin Hall phase in its energetically most stable structure. Using first principles calculations, we demonstrate that uniaxial strain drives a transition from this phase to a conventional single pair QSH phase with $\mathbb{Z}_2 = 1$. The double QSH phase hosts two pairs of helical edge states, resulting in enhanced edge conductance and a quantized spin Hall response that remains robust over an energy window of up to $\sim$100 meV. These results establish bilayer ZrTe$_5$ as a tunable platform connecting conventional and double QSH phases within a single material. More broadly, they demonstrate that untwisted van der Waals bilayers can host topological phases beyond the conventional $\mathbb{Z}_2$ classification.
\end{abstract}
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Quantum spin Hall (QSH) insulators are two-dimensional (2D) topological phases that host conducting edge states protected from backscattering by time reversal symmetry~\cite{qi_2011,kane_mele_2005,bernevig_2006,konig_2007, qian_2014}. In conventional QSH insulators characterized by the topological invariant $\mathbb{Z}_2 = 1$, an odd number of pairs of helical edge states gives rise to quantized edge transport. Systems with an even number of pairs of helical edge states, referred to as double QSH insulators, or even spin Chern insulators, fall outside the conventional $\mathbb{Z}_2$ classification ($\mathbb{Z}_2 = 0$) and are instead characterized by an even spin Chern number ($C_s$)~\cite{sheng_2006,prodan_2009,ezawa_2013,bai_2022,liu_2024}. Such phases have been theoretically predicted to exhibit increased edge conductance and robustness against time-reversal-symmetry-breaking perturbations when the spectrum of the projected spin operator component $P s_\alpha P$, with $P=\sum_{n\in\mathrm{occ}}\dyad{u_n}$, remains gapped around zero, allowing the occupied subspace to be decomposed into positive- and negative-spin sectors~\cite{sheng_2005,prodan_2009,yang_2011,ezawa_2013}. While signatures of these phases have recently been reported in twisted van der Waals (vdW) materials~\cite{Kang2024,kang_2024}, experimentally accessible realizations remain extremely rare, particularly in systems with sizeable band gaps suitable for high temperature operation~\cite{roadmap_2024}.
Zirconium pentatelluride (ZrTe$_5$) is a layered vdW material that has been extensively studied for its tunable topological properties~\cite{weng_2014,manzoni_2016,chen_2017,tang_2019,galeski_2021,tang_2021,wang_2021,chenye_2025}. The three-dimensional (3D) crystal lies in close proximity to a topological phase transition and can be tuned via external strain~\cite{fan_2017,mutch_2019,xu_2018,zhang_2021,tajkov_2022,chenye_2025}, but its sensitivity to lattice deformations along three crystallographic directions, together with the presence of a large number of conducting channels, limits its suitability for controlled edge transport. Reducing the thickness to a few layers could provide greater control over electronic and topological behaviour, but only a few experiments have achieved this regime~\cite{qiu_2016, tang_2021}. In the 2D limit, monolayer ZrTe$_5$ has long been predicted to realize a QSH phase with a large band gap~\cite{weng_2014}, yet its experimental realization remains challenging despite recent efforts~\cite{xu_2024}. Bilayer ZrTe$_5$, which is more accessible via exfoliation, provides a natural intermediate system that remains comparatively unexplored, combining experimental feasibility with tunable topological behaviour~\cite{tajkov_2023}.
Here, based on first-principles calculations, we show that bilayer ZrTe$_5$ hosts a tunable topological phase diagram under lattice deformations, comprising gapped phases with $\mathbb{Z}_2 = 0$ and $\mathbb{Z}_2 = 1$ separated by a metallic state. The $\mathbb{Z}_2 = 0$ phase, corresponding to the most stable structure, realizes a double QSH state, while the $\mathbb{Z}_2 = 1$ phase corresponds to a conventional QSH insulator, with a transition between them driven by uniaxial strain. The double QSH phase exhibits two pairs of helical edge states and a corresponding double quantized spin Hall conductivity (SHC). Both conventional and double QSH phases exhibit wide quantized SHC plateaus, indicating a large effective transport gap. These results demonstrate that multi-channel QSH phases beyond the $\mathbb{Z}_2$ classification can arise in realistic vdW materials without twisting and establish bilayer ZrTe$_5$ as a realistic platform for strain-tunable transitions between conventional and double QSH insulators and robust high-temperature topological transport~\cite{prodan_2009,yang_2011,ezawa_2013,Kang2024}.
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\begin{figure*}
\centering
\includegraphics[width=\textwidth]{crystal_structure_gap_evolution}
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\caption{
(\textbf{a}) Crystal structure of 3D and bilayer ZrTe$_5$; the bilayer that can be exfoliated from the 3D crystal is highlighted. (\textbf{b}) The 2D Brillouin zone. (\textbf{c}) Bandgap evolution along the $-X - \Gamma - X$ $k$-path illustrating the topological phase transition. (\textbf{d}) Orbital-projected band inversion during the topological phase transition.}
\label{fig:crystal_bandgap_evolution}
\end{figure*}
The crystal structure of 3D ZrTe$_5$ contains two vdW layers in AB stacking within an orthorhombic Bravais lattice~\cite{weng_2014,chenye_2025}, as depicted in Fig.~\ref{fig:crystal_bandgap_evolution}(\textbf{a}). Exfoliating along the stacking direction, $y \parallel \mathbf{a}_2$, yields a single 2D AB-stacked bilayer arrangement, while further exfoliation leads to the monolayer structure. However, monolayer flakes are significantly less abundant than few-layer (including bilayer) flakes in standard exfoliation methods~\cite{hernandez_2008, coleman_2011, backes_2020, wang_exfoliation_2023}. Therefore, we focus on the bilayer system in the main text, while the monolayer calculations are reported in the Supplemental Material (SM).
The topological properties of ZrTe$_5$ are tunable by external strain, which can be simulated by adiabatic lattice deformation in DFT calculations~\cite{fan_2017,manzoni_2016,mutch_2019,xu_2018,zhang_2021,tajkov_2022,chenye_2025}. In the following, we consider biaxial lattice deformations and analyze the material for distinct values of the lattice parameters $\mathbf{a}_1$ and $\mathbf{a}_3$. The first topological signature we find is the bandgap closing and reopening shown in Fig.~\ref{fig:crystal_bandgap_evolution}(\textbf{c}), which is considered a hallmark of a topological phase transition~\cite{bernevig_2006,mutch_2019,tajkov_2023}. It is accompanied by the characteristic band inversion between the valence and conduction bands near the $\Gamma$ point, where the topological phase transition occurs~\cite{weng_2014,chen_2017,wang_2021}. A representative evolution of the orbital character is shown in Fig.~\ref{fig:crystal_bandgap_evolution}(\textbf{d}), where the band inversion can be clearly seen between the Te-$p_x$ and Zr-$d_{yz}$ orbitals near $\Gamma$. In the $\mathbb{Z}_2=0$ phase, the valence band is dominated by the Te-$p_x$ orbital, while the conduction band is mainly of Zr-$d_{yz}$ character; after the topological phase transition to the regime with $\mathbb{Z}_2=1$, i.e., after crossing the metallic phase, the orbital characters of the valence and conduction bands are inverted.
\begin{figure*}
\centering
\includegraphics[width=\textwidth]{z2_bandgap_diagrams}
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\caption{
(\textbf{a}) Topological phase diagram of bilayer ZrTe$_5$ under lattice deformation, where $\mathbb{Z}_2 = 1$ indicates the conventional QSH phase and $\mathbb{Z}_2 = 0$ denotes a distinct topological regime corresponding to the double QSH phase. The three red stars mark the deformations of the three phases shown in Figs.~\ref{fig:crystal_bandgap_evolution}(\textbf{c}) and~\ref{fig:crystal_bandgap_evolution}(\textbf{d}). The dark diamond denotes the fully relaxed DFT structure. (\textbf{b}) The global bandgap and (\textbf{c}) the local bandgap near $\Gamma$ for each set of lattice parameters, in units of meV. The black frames highlight the deformations for which the global bandgap is located near $\Gamma$, where the bandgap closing and reopening occur.}
\label{fig:z2}
\end{figure*}
The topological invariant is considered the key quantity for determining the topological properties of a material and the most rigorous way to confirm topological phases. Figure~\ref{fig:z2}(\textbf{a}) shows the resulting topological phase diagram, based on the $\mathbb{Z}_2$ invariant, under biaxial lattice deformation as a function of ${a}_1$ and ${a}_3$. Here, $\mathbb{Z}_2 = 1$ indicates the QSH phase, while $\mathbb{Z}_2 = 0$ corresponds to a double QSH phase that is not captured by the $\mathbb{Z}_2$ classification and will be analyzed below. The topological phase transition occurs at the boundary between these two regimes, mainly distinguished by the value of ${a}_1$, which is consistent with the bandgap closing and reopening in Fig.~\ref{fig:crystal_bandgap_evolution}(\textbf{c}) and in the supplemental figures (see SM). In the diagram, the red stars mark the three deformations at which the band evolution is presented in Fig.~\ref{fig:crystal_bandgap_evolution}(\textbf{c}, \textbf{d}). Remarkably, the most stable structure of bilayer ZrTe$_5$, marked by the dark diamond, is located close to the topological phase transition region. This proximity implies easy tunability of the topological properties by external strain and may also explain possible experimental discrepancies arising from sample quality~\cite{mutch_2019,zhang_2021,tajkov_2022,chenye_2025}.
The value of the bandgap is essential for applications of topological materials and is a key factor that constrains the operating temperature of the QSH effect~\cite{qian_2014,xu_2024,roadmap_2024}. The global bandgap and the local one near $\Gamma$, calculated within the Perdew-Burke-Ernzerhof exchange-correlation functional~\cite{perdew_1996}, are shown in Figs.~\ref{fig:z2}(\textbf{b, c}), respectively. Importantly, bandgap closing can occur only at the $\Gamma$ point, while the valence band maximum and conduction band minimum may lie away from this point. The relevant deformations are those for which the global bandgap is located near $\Gamma$, highlighted by the black frames in Figs.~\ref{fig:z2}(\textbf{b, c}). Here, $29$~meV and $81$~meV are the largest bandgaps found for the $\mathbb{Z}_2=1$ and $\mathbb{Z}_2=0$ regimes, respectively. An additional calculation using the Heyd-Scuseria-Ernzerhof (HSE) functional~\cite{hse_2009} increases the value of the former to $\sim 50$~meV, suggesting that the bandgaps in Figs.~\ref{fig:z2}(\textbf{b, c}) can be nearly twice as large. Bands located at $k$ points other than $\Gamma$ can lie closer to the Fermi level. The deformations for which the conduction band edge lies below the valence band edge are indicated by negative bandgap values in Figs.~\ref{fig:z2}(\textbf{b, c}).
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To further assess the topological phase, we calculated the spin Hall conductivity (SHC) for all considered bilayer structures. Figure~\ref{fig:shc_bands_bulk_edge_l}(\textbf{a}, \textbf{b}) shows representative results together with the corresponding full $k$-path band structures, where Fig.~\ref{fig:shc_bands_bulk_edge_l}(\textbf{a}) corresponds to the $\mathbb{Z}_2 = 1$ regime and Fig.~\ref{fig:shc_bands_bulk_edge_l}(\textbf{b}) to the $\mathbb{Z}_2 = 0$ phase. Among the six symmetry-allowed SHC tensor components~\cite{roy_2022}, $\sigma^{s_y}_{ x z}$ and $\sigma^{s_y}_{z x}$ dominate, giving rise to spin currents with the out-of-plane spin polarization. The components $\sigma^{s_x}_{ y z}$ and $\sigma^{s_z}_{ y x}$ are small for most deformations but can reach up to half of the quantized value in a few cases, while $\sigma^{s_x}_{ z y}$ and $\sigma^{s_z}_{ x y}$ remain negligible for all deformations.
Quantized SHC is observed only for the dominant components $\sigma^{s_y}_{xz}$ and $\sigma^{s_y}_{zx}$. In the $\mathbb{Z}_2 = 1$ regime, we obtain $\sigma^{s_y}_{xz} = 2 \, e^2/h$ [Fig.~\ref{fig:shc_bands_bulk_edge_l}(\textbf{a})], consistent with a conventional QSH phase. In contrast, in the $\mathbb{Z}_2 = 0$ regime, the SHC reaches $\sigma^{s_y}_{xz} = \sigma^{s_y}_{zx} = 2 \, (2 \, e^2/h)$ [Fig.~\ref{fig:shc_bands_bulk_edge_l}(\textbf{b})], indicating a doubled quantized response. While the quantization in the $\mathbb{Z}_2 = 0$ regime appears inconsistent with the conventional classification, the $\mathbb{Z}_2$ invariant defines the modulo of the number of pairs of helical edge states, and systems with an even number of pairs can still host robust edge states beyond the $\mathbb{Z}_2$ description~\cite{sheng_2006,bai_2022,liu_2024,tan_2025}. In this context, the $\mathbb{Z}_2 = 0$ phase realized here corresponds to a double QSH state. For comparison, we show in the SM that monolayer ZrTe$_5$ remains a conventional QSH insulator with quantized SHC of $2 \, e^2/h$ across all deformations. Since the bilayer consists of mirror-plane AB stacking of two monolayer QSH insulators, the interaction between opposite conducting helical edge channels with the same spin orientation can induce hybridization~\cite{stuhler_2022}. Therefore, a pair of conduction channels in the $\mathbb{Z}_2 = 1$ regime is (partially) lifted without breaking time-reversal symmetry. In contrast, in the $\mathbb{Z}_2 = 0$ phase, the two pairs of helical edge states coexist without hybridization, yielding a double quantized SHC. This demonstrates the potential for symmetry-based design of double QSH phases in van der Waals materials.
\begin{figure*}
\centering
\includegraphics[width=\textwidth]{shc_bands_bulk_edge_l}
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\caption{
Bulk band structures and the corresponding SHC for the representative lattice deformations characterized by (\textbf{a}) $\mathbb{Z}_2=1$, (\textbf{b}) $\mathbb{Z}_2=0$. (\textbf{c}) $\mathbb{Z}_2=1$ regime has two robust edge states connecting valence and conduction bands, as numbered and colored. (\textbf{d}) $\mathbb{Z}_2=0$ phase has four robust edge states connecting valence and conduction bands, as numbered and colored.}
\label{fig:shc_bands_bulk_edge_l}
\end{figure*}
We further analyze the relation between the SHC and the bulk band structure. Figure~\ref{fig:shc_bands_bulk_edge_l}(\textbf{a}, \textbf{b}) shows that many bands do not contribute significantly to the quantized SHC. Notably, the SHC plateaus can extend well beyond the energy window defined by the bandgap near $\Gamma$. For instance, in Fig.~\ref{fig:shc_bands_bulk_edge_l}(\textbf{a}), additional states present along the $Z-U$ direction contribute to subleading components such as $\sigma^{s_x}_{yz}$ but do not affect the quantized values of $\sigma^{s_y}_{xz}$ and $\sigma^{s_y}_{zx}$. Similarly, in Fig.~\ref{fig:shc_bands_bulk_edge_l}(\textbf{b}), the extended SHC plateau remains robust despite the presence of additional conduction bands away from the $\Gamma$ point. These observations indicate that the effective transport gap relevant for the quantized response can be substantially larger than the global bandgap or the local gap at $\Gamma$.
The origin of the quantized SHC plateaus and their relation to the band structure can be understood from the edge state calculations shown in Fig.~\ref{fig:shc_bands_bulk_edge_l}(\textbf{c}, \textbf{d}). The spectra reveal helical edge states connecting the valence and conduction bands, with one pair in the $\mathbb{Z}_2 = 1$ regime and two pairs in the $\mathbb{Z}_2 = 0$ phase, resulting either in one or two pairs of conductance channels, respectively. Other edge states are also present but are not topologically protected. Notably, the helical edge states extend deep into both the valence and conduction parts of the spectrum, which explains the extended SHC plateaus. As a result, the quantized response remains robust even in the presence of additional bulk bands. Consequently, while the bulk bandgaps are on the order of a few tens of meV, the effective transport gap associated with the quantized SHC reaches values approaching 100~meV, and in some cases even 200~meV (see SM), and remains largely unaffected by additional bulk states or nonhelical edge states.
In summary, we show that AB-stacked bilayer ZrTe$_5$ realizes a tunable topological phase diagram with both conventional and double QSH phases, originating from the interlayer interaction between two monolayer QSH insulators. The fully relaxed structure lies close to the phase boundary, enabling efficient control via moderate strain. In addition to the $\mathbb{Z}_2 = 1$ phase with a quantized spin Hall conductivity of $2 \, e^2/h$, the system exhibits a $\mathbb{Z}_2 = 0$ regime characterized by a doubled quantized response, $2 \, (2 \, e^2/h)$, arising from two pairs of helical edge states. This demonstrates that the $\mathbb{Z}_2$ invariant alone is insufficient to capture the topological properties. More broadly, our results suggest that double quantum spin Hall phases may be more widespread than previously recognized and could have been overlooked in systems where topology is assessed solely through the $\mathbb{Z}_2$ classification. We demonstrate that multichannel QSH phases can emerge as ground states in realistic vdW bilayers and can be tuned within a single system, providing a practical route for topological materials discovery beyond the conventional $\mathbb{Z}_2$ classification.
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\section{Computational details}
The first-principles calculations based on DFT are performed using the \texttt{Vienna Ab initio Simulation Package} (VASP)~\cite{vasp_1993, vasp_1996, kresse_1996_2}. The same input parameters are used for each lattice deformation to ensure consistent and comparable results. The projector-augmented-wave method is used to describe the ion-electron interaction~\cite{blochl_1994,kresse_joubert_1999}. The kinetic-energy cutoff for the plane-wave basis is set to 350~eV, and energy convergence threshold in self-consistent calculations to $10^{-6}$~eV. The generalized gradient approximation of Perdew, Burke, and Ernzerhof is used for the exchange-correlation functional~\cite{perdew_1996}. Spin-orbit coupling is taken into account in all calculations except for the structural relaxations, and the symmetries are kept switched on to preserve the topological properties. The Brillouin zone is sampled using a $20 \times 1 \times 6$ $k$-point mesh centered at $\Gamma$ for atomic relaxation and self-consistent calculations, and increased to a $26 \times 1 \times 8$ mesh during non-self-consistent computations.
In the post-processing step, we used \texttt{Wannier90}~\cite{mostofi_2008,pizzi2020} to build the Wannier tight-binding Hamiltonian by projecting all Te[s, p] and Zr[s, p, d] atomic orbitals. The final Hamiltonian is used to calculate the 2D topological $\mathbb{Z}_2$ index and the WCC evolution diagrams in both \texttt{Z2Pack}~\cite{z2pack_2011,z2pack_2017} and \texttt{WannierTools}~\cite{wanniertools_2018}. The latter program was also used to compute edge states using the semi-infinite Green's function approach~\cite{lopez_sancho_1985}. The global and local bandgaps are calculated from both the VASP and Wannier90 smooth band structures, where the value is defined as the energy difference between the conduction- and valence band edges. The SHC is calculated from the atomic-orbital-projected tight-binding Hamiltonian using \texttt{PAOFLOW}~\cite{paoflow_2018,paoflow_2021} with an ultra-dense k-mesh of $100 \times 1 \times 30$. The space group is determined by \texttt{Spglib}~\cite{Togo31122024} and \texttt{IrRep}~\cite{irreps}. To check for possible band inversion after bandgap reopening, we calculated irreducible representations at $\Gamma$ for both the valence and conduction bands using \texttt{IrRep}, as well as orbital-projected band structures from VASP and spin-projected band structures from \texttt{WannierTools}.
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% Data availability
\medskip
\textbf{Data availability} \par
The data that support the findings of this study will be openly available at DataVerseNL XXX after the paper is accepted, including those that do not appear in the main text or SM but are relevant for reproducing the results.
% Acknowledgements
\medskip
\textbf{Acknowledgements} \par
We thank M. Mostovoy, Y. Kreminska and L. Eek for helpful discussions. We acknowledge the research program “Materials for the Quantum Age” (QuMat) for financial support. This program (registration number 024.005.006) is part of the Gravitation program financed by the Dutch Ministry of Education, Culture and Science (OCW). The calculations were carried out on the Dutch national e-infrastructure with the support of SURF Cooperative (EINF-10786) and on the Hábrók high-performance computing cluster of the University of Groningen.
% Author contributions
\medskip
\textbf{Author contributions} \par
C.C.Y. conducted all DFT calculations, analyzed and interpreted the data, and wrote the manuscript draft. G.K. performed the initial DFT calculations. J.S. supervised the project. All authors contributed to discussions and to the final version of the manuscript.
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\end{thebibliography}%
\end{document}