Stable ultrahigh-density magneto-optical recordings using introduced linear defects
Extracted source text ยท arXiv cond-mat/0105005
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\title{%{\rm \begin{flushright}Nature {\bf 410}, 444 (March 22, 2001).\end{flushright}}\\
Stable ultrahigh-density magneto-optical recordings using
introduced linear defects}
\author{L. Krusin-Elbaum$^{\star\dag}$, T. Shibauchi$^{\star \dag\S}$, B. Argyle$^{\star}$, L. Gignac$^{\star}$
\& D. Weller$^{\ddag\parallel}$}
\address{$^{\star}$IBM T.~J. Watson
Research Center, Yorktown Heights, NY 10598, USA}
\address{$^{\S}$MST-STC, Los Alamos National Laboratory, MS-K763, Los Alamos, NM 87545,
USA}
\address{$^{\ddag}$IBM Almaden Research Center, San Jose, CA 95120,
USA}
\address{$^{\dag}$These authors contributed equally to this work}
%\date{\today}
\wideabs{ {\rm \begin{flushright}Nature {\bf 410}, 444 (March 22,
2001).\end{flushright}}
\maketitle }
\narrowtext
%\vspace{19mm}
\vspace{6mm}
\noindent {\bf The stability of data bits in magnetic recording
media \cite{daniel,thompson} at ultrahigh densities is
compromised by thermal `flips' -- magnetic spin reversals -- of
nano-sized spin domains \cite{Hubert}, which erase the stored
information. Media that are magnetized perpendicular to the plane
of the film, such as ultrathin cobalt films or multilayered
structures \cite{kirby,allenspach1}, are more stable against
thermal self-erasure \cite{thompson,weller99} than conventional
memory devices. In this context, magneto-optical memories seem
particularly promising for ultrahigh-density recording on
portable disks, and bit densities of $\sim$100 Gbit inch$^{-2}$
(ref. \onlinecite{partovi99a}) have been demonstrated using
recent advances in the bit writing and reading techniques
\cite{partovi99a,awano,betzig91,partovi99,Kaneko}. But the
roughness and mobility of the magnetic domain walls
\cite{jaggedness,lemerle} prevents closer packing of the magnetic
bits, and therefore presents a challenge to reaching even higher
bit densities. Here we report that the strain imposed by a linear
defect in a magnetic thin film can smooth rough domain walls over
regions hundreds of micrometers in size, and halt their motion. A
scaling analysis of this process, based on the generic physics of
disorder-controlled elastic lines
\cite{healy,hwa,Blatter,krusin1}, points to a simple way by which
magnetic media might be prepared that can store data at densities
in excess of 1 Tbit inch$^{-2}$.}
Increasing information storage to densities past 100 Gbit
inch$^{-2}$ may evolve through extensions of current magnetic
recording technologies (to patterned media \cite{weller99}, for
example). But such increases in storage density might be achieved
by using other techniques such as holography (via interference
patterns produced by two intersecting laser beams)
\cite{holography}, or micromachined nano-cantilever arrays
\cite{binnig}, or -- to satisfy a relentless demand for
portability -- using scanning localized subwavelength ($<
\lambda/40$) (near-field) optical probes \cite{betzig91} that can
imprint and resolve images in magneto-optic media \cite{awano} of
the order of the probe size. The bit-writing with local probes
may be thermally assisted by a current \cite{nakamura} or a laser
beam that raises local temperature to the vicinity of the Curie
temperature $T_C$, resulting in the formation of a reversed
domain with a rough wall. To realize smooth and (for precise
positioning) stable (`noiseless') domain walls that can be
implemented without, for example, nanoscale patterning, we
suggest a conceptual identification of walls with elastic lines
\cite{Blatter} and seek to utilize linear defects inducing a
directional long-range strain field in ultrathin Pt/Co/Pt
structures -- long considered excellent candidates for
high-density recording at blue-range wavelengths \cite{Kaneko}.
In such trilayers (Fig. 1), large uniaxial perpendicular
anisotropy is sustained by the interface contribution $\propto
1/d_{\rm Co}$ up to Co thickness $d_{\rm Co} \sim$ 1.5~nm; beyond
this thickness the magnetizaton switches from out-of-plane to
in-plane \cite{allenspach1}.
Figure 2a shows two typical up-domains (see legend for imaging
details \cite{bernie}), nucleated owing to a locally suppressed
coercive field \cite{Hubert} $H_c$ in a 0.7~nm Co film sandwiched
between 3~nm (top) and 2~nm (bottom) Pt layers, prepared using
standard deposition parameters \cite{Weller} and without linear
defects. The domains are round with (undirected) domain walls
(DWs) that are as rugged as expected \cite{jaggedness}. We note
that patterned nucleation sites, as in Fig. 2b-d, do not reduce
either DW roughness or velocity. As magnetic field is increased
beyond $H_c = 750$~Oe (inset in Fig. 3), the outward motion of
DWs becomes increasingly swift (estimated from displacement of a
small segment of the wall during 500-ms field pulses, the wall
velocity is more than $180~ \mu$m s$^{-1}$ at $H = 854$~Oe).
To control the rugged DW structure we will use a recently found
connection between the DW behavior in thin films \cite{lemerle}
and that of elastic lines \cite{healy,hwa,Blatter}. One prominent
example of directed elastic lines are wandering vortex lines
(quantized magnetic flux lines maintained by a swirling tube of
current) in high temperature superconductors \cite{Blatter} that
can be strongly localized by interaction with columnar (linear)
defects \cite{krusin1}. A powerful arsenal of ideas can now be
engaged to understand how a linear defect potential may localize
and reduce the roughness of DWs, and force them to accommodate to
the defect shape. We introduce a line defect that delivers a
three-punch action. Through magneto-elastic coupling, (i) it
gives the wall a preferred direction \cite{healy} (along the
defect), (ii) it increases its elasticity, reducing the DW
roughness as it negotiates the random landscape, and (iii) it
acts to reduce wall velocity to a nearly full stop in fields
greater than the coercive field of unmodified film. The defect is
installed during the Co deposition by imposing an anisotropic
tension (clamping) on the substrate and its subsequent release
\cite{stress}. The resulting Co `fold' (Fig. 2g,h) introduces a
$y$-axis invariant long-range strain field $\varepsilon(x)$.
A DW driven by the magnetic field toward such linear defect (Fig.
2e,f) presents a structural contrast with the DWs in the
unmodified film in Fig. 2a. Even at large distances ($\sim
300~\mu$m) away from the defect, the DW conforms on the average
to the defect line along $y$. It becomes progressively smoother
(and straighter) as it approaches the defect. It also rapidly
decelerates. The deceleration and near-standstill of the wall
depends on the proximity to the defect, as represented by the
spatial progression of the velocity-versus-field (force) response
in Fig. 3. The $v$-$H$ curves are highly nonlinear, as has been
reported recently in Co films \cite{lemerle} where the disorder
landscape is formed, for example, by atomic scale imperfections
at the film--substrate interface. Such nonlinear response in the
limit of vanishing driving force is a signature of glassy (creep)
dynamics \cite{vinokur}, well established for the elastic vortex
lines in a superconductor through measurements of the
voltage-versus-current ($V$-$I$) characteristics \cite{Blatter}.
Above $H_{crit}$ (obtained from the $v$-$H$ curves by the usual
velocity cut-off criterion, here chosen at $v = 0.14~\mu$m
s$^{-1}$) the driving field exceeds the `pinning' force
\cite{Blatter} and the DW response becomes linear and faster. We
note that DW velocity, even far away from a line defect, is
orders of magnitude lower than in unmodified films. Figure 3
shows a field-forward advance of $v$-$H$ curves to higher fields,
and an enhanced $H_{crit}$ (often referred to as a `propagation
field' \cite{Hubert}) on the approach to the line defect. An
effective potential well that localizes the wall is formed by the
driving field pushing the wall and the line-defect that acts
against this push. It resembles columnar defects in a
superconductor, where the critical current $J_{crit}$ is enhanced
\cite{krusin1}. $H_{crit}$ correlates with the long-range
repelling force field $H(x)$ exerted on the DWs by the
line-defect, whose spatial extent is mapped in Fig. 4a. The shape
of $H(x)$ -- a ridge along $y$ -- is either extracted directly
from Kerr images taken with increasing $H$ after a fixed
propagation time $t$ (main panel), or more quantitatively from
the averaged DW positions ${\langle x\rangle}_y$ versus time at
all fields. As illustrated in the inset, it takes a higher field
$H$ to get closer to the line-defect; but at any $H$, after $t
=1,800$~s, two DWs -- one approaching the ridge from the left and
another from the right -- become effectively stationary.
Within the elastic description of a DW, the relevant scale is a
collective pinning \cite{vinokur} length
$L_c=(\epsilon_{el}^2\xi^2/\Delta)^{1/3}$, where $\xi$ and
$\Delta$ are characteristic size and strength of underlying
random disorder, and $\epsilon_{el}$ is the wall energy. At
lengths $L>L_c$, the wall will elastically adjust to the random
landscape to nestle in a local minimum energy configuration. The
DW energy density (in addition to a uniform field term and
ignoring a weak dipolar term) can be written as a sum of three:
the exchange energy $\gamma_{ex}(x)$, the anisotopy energy
$\gamma_{an}(x)$, and the magneto-elastic energy
\cite{anisotropy} $\gamma_{m{\rm -}el}(x)$ coupling to the strain
$\varepsilon(x)$ generated by the line-defect,
\begin{equation}
\gamma_{DW} = ~{\underbrace {A{(d\theta/dx)}^2}_{\gamma_{ex}}}~~~
{\underbrace {-K'm_z^2}_{\gamma_{an}}}~~~ {\underbrace
{-B\varepsilon(x)m_z^2}_{\gamma_{m{\rm -}el}}}~~+H^2/8\pi.
\label{DWenergy}
\end{equation}
Here $A$ is the exchange stiffness \cite{Hubert}, $K' = K - 2\pi
M_S^2$ ($K$ is the anisotropy constant and $M_S$ is
Pt-polarization-enhanced saturation magnetization of Co), and $B$
is related to Young's modulus of the film. Magnetization ${\vec {
M }}$ rotates from `up' to `down' within the wall thickness
$\delta$ (we estimate at $\sim$3~nm) and the wall (in the
simplest form) is of Bloch type \cite{lemerle}, where the
azimuthal angle $\phi = 0^\circ$ and the rotation is
parameterized by an angle $\theta$ between the $z$-axis and
${\vec { M }}$ ($m_z$ is the direction cosine along $z$).
Minimizing \( {\displaystyle \int\!\gamma_{DW}dx} \) leads to DW
energy \cite{Hubert} ${\cal E}_{DW} = 4\sqrt{AK'_{eff}}$, where
$K'_{eff} = K' +B\varepsilon(x)$. The total wall energy (per unit
area) in a magnetic field $H$ is $~{\cal E} = {\cal
E}_{DW}-2M_SHx$. From the stability condition $d{\cal E}/dx = 0$
we obtain a nonlinear differential equation for $\varepsilon(x)$:
$ H(x) = A{M_S}^{-1}B(d\varepsilon/dx){{(A K'_{eff})}}^{-1/2}$,
which we solve numerically using the stationary $H(x)$ mapped in
Fig. 4a. The result is a factor of $\sim 2$ enhanced effective
anisotropy $K'_{eff}$ (Fig. 4b) and, consequently, an enhanced DW
elastic energy (per unit length) \cite{lemerle}
$\epsilon_{el}=4\sqrt{AK'_{eff}}d_{\rm Co}$. Thus, the enhanced
elasticity of DW is in part responsible for the longer $L_c$. The
longer $L_c$ is a key to the reduced DW roughness. This can be
seen from the analysis of transverse displacements of the domain
wall segments by computing from the DW images a (line shape)
correlator \cite{healy} $x_t = \sqrt{<[x(y)-x(y+L)]^2>}$,
predicted for $L < L_c$ to scale as \cite{Blatter} $ x_t \propto
{(L/L_c)}^{3/2}$. We find that the characteristic length $L_c$ is
enhanced in the vicinity of the line-defect by a factor of $\sim
5$ (Fig. 4c). This implies a reduction of roughness, as measured
by $x_t$, by a factor of $\sim 10$ on the shortest length scales
and hence a potential increase in the areal density by nearly two
orders of magnitude. In its proximity, the line defect wins over
randomness so that on sufficiently long distances along its
length DWs become essentially `flat' (that is, finite $x_t$ for
$L \rightarrow \infty $) \cite{healy} in fields up to $\sim 2
H_c$. The wall-smoothing at higher fields and at speeds of
current recording technology ($H \approx 3 H_c, ~\sim 1~$Gbit
s$^{-1}$) deserves further study for practical implementations of
this effect. The long-range strain associated with a line defect
presents an efficient, and relatively simple and cost-effective
control of domain walls, with only a few such defects needed to
stabilize large areas of ultrathin films.
\small
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\vspace{10mm}
\noindent {\bf Acknowledgements}
\small
We thank J. Slonczewski, V. Vinokur, G. Blatter, and G. Zimanyi for useful discussions.
Correspondence and requests for materials should be addressed to L. Krusin-Elbaum, fax:
+1-914-945-2141; e-mail: krusin@us.ibm.com.
$^{\parallel}$ present address: Seagate Technology, Pittsburgh, PA 15203, USA.
\onecolumn
\normalsize
\begin{figure}[tb]
\begin{center}
%\vspace{-15mm} \hspace{-15mm}
\includegraphics[width=5cm]{fig1final.eps}
%\vspace{-25mm}
%\framebox[55mm]{\rule[-21mm]{0mm}{43mm}}
\end{center}
\caption{A sketch of an ultrathin Pt/Co/Pt trilayer stack
explored in this study. Stacks were electron-beam evaporated at
$190^\circ$C on glass or SiN$_x$/Si substrates with a 20~nm (111)
textured Pt buffer layers, as described in ref.~22. }
\label{fig:1}
\end{figure}
%\onecolumn
\begin{figure}[tb]
\begin{center}
%\vspace{-15mm}
\includegraphics[width=18cm]{fig2final.eps}
%\vspace{-25mm}
%\framebox[55mm]{\rule[-21mm]{0mm}{43mm}}
\end{center}
\caption{Effect of a linear defect on domain walls in Pt/Co/Pt
films. Polar magneto-optic Kerr microscopy
\protect{\cite{Hubert}} images were obtained using a 3-W argon
laser illumination ($\lambda$ = 514.5 $\&$ 488.0 nm) to enhance
phase contrast with a laser-beam tandem-dithering technique
\protect{\cite{bernie}} to eliminate the effects of laser
coherence. We first saturated magnetization with a negative
$z$-axis magnetic field and then quenched field to zero. After a
first positive square field pulse, an up-domain was nucleated and
its motion was imaged at short time intervals in fields up to
$\sim 2~$kOe. {\bf a}, Typical room-temperature image of domains
in a film without line defects after a 854-Oe magnetic field
applied for 1 s was removed. The walls show roughness on length
scales much larger than the grain size ($\sim 20$-$30~$nm) of the
Pt buffer. The rapid motion of domain walls (DWs) is illustrated
in snapshots in field $H = 616~$Oe after {\bf b} 1 s, {\bf c}, 4
s and {\bf d}, 8 s of DWs that were seeded with elongated defects
installed with a 30-keV Ga$^+$ FIB (Focused Ion Beam). DW
roughness is independent of the seed-defect width (150~nm for
bottom and 1~$\mu$m for top domains). {\bf e}, {\bf f}, A
remarkable reduction in the domain wall roughness and speed is
illustrated when a line-defect (dashed line along $y$ axis) is
introduced. The images here were taken at $H = 924~$Oe ($>H_c =
750~$Oe in {\bf a}] at {\bf e}, 40 s and {\bf f}, 1,800 s. The
domain wall becomes directed along the defect. A cross-sectional
electron transmission micrograph ({\bf g}) of an $\sim
30$-nm-thin FIBed section -- normal to the line-defect -- shows
an asymmetric `fold' of the trilayer stack. An amorphous Pt
(a-Pt) cap was deposited to protect the trilayer during the FIB
process. The $\sim 10$-nm elevation of Co in the `fold' is traced
by the X-ray microprobe ({\bf h}) at spots such as are marked by
six white circles in {\bf g} (the bottom is assigned `0'). Co
intensity versus spot number is plotted in the inset of {\bf h}. }
\label{fig:2}
\end{figure}
\begin{figure}[tb]
\begin{center}
%\vspace{9pt}
\vspace{-8mm}
\includegraphics[width=10cm]{fig3final.eps}
%\vspace{-15mm}
%\framebox[55mm]{\rule[-21mm]{0mm}{43mm}}
\end{center}
\caption{Domain wall velocity as a function of applied magnetic
field for different values of $x$. Far away ($-$578~$\mu$m) from
the line-defect `ridge' at $x = 0$, the velocity takes off
rapidly with field near $H_{crit}$. Well below $H_{crit}$, the
nonlinear $v$-$H$ curves follow \cite{lemerle} $v(H) \propto
\exp[-(U_c/k_BT){(H_{crit}/H)}^\mu]$, where $U_c$ is the
collective pinning energy scale, $k_B$ is the Boltzmann constant,
$T$ is temperature, and $\mu = 1/4$ is the glassy dynamical
exponent related to the roughness exponent, see ref.~14.
$H_{crit}$ grows on the approach to the line defect (see Fig.
4a). Inset: A square Kerr rotation (magnetization) hysteresis
characteristic of perpendicular anisotropy of our film in Fig.
2a.}
\label{fig:3}
\end{figure}
%
\begin{figure}[tb]
\begin{center}
%\vspace{9pt}
\vspace{-8mm}
\includegraphics[width=12cm]{fig4final.eps}
%\vspace{-15mm}
%\framebox[55mm]{\rule[-21mm]{0mm}{43mm}}
\end{center}
\caption{A force field $H(x)$ generated by a line-defect along
$y$ repels a magnetic-field-driven domain wall. {\bf a}, A fixed
$y$-cut from a map of the defect ridge obtained from combining
domain images for different fields after 400~s. To display the
long range ($x = -680$ to $+140$~$\mu$m) of the force field of
the line defect, we overlapped two series of Kerr observations
($H = 700$ to $1,316~$Oe): one containing a line defect at $x=0$
(as in the inset) and another shifted to the left by 400~$\mu$m.
The ridge is mapped by imaging two domains approaching it from
both sides. Contours (at 20-s intervals) of the defect field
(inset) that were obtained by extracting DW positions at
different times and fields show how two DWs on two sides of the
ridge become stationary when defect field balances the driving
field, defining the ridge's outline. The propagation field
$H_{crit}$ (solid blue dots), obtained from $v$-$H$ curves in
Fig. 3 is enhanced by the line defect. The line defect
effectively enhances ({\bf b}) the anisotropy constant $K'_{eff}$
and elongates ({\bf c}) the scaling length $L_c$. }
\label{fig:4}
\end{figure}
\end{document}