An Origin of CMR: Competing Phases and Disorder-Induced Insulator-to-Metal Transition in Manganites
Extracted source text ยท arXiv cond-mat/0406463
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\begin{document}
\title*{An Origin of CMR: Competing Phases and Disorder-Induced
Insulator-to-Metal Transition in Manganites}
\titlerunning{An Origin of CMR}
% Use \titlerunning{Short Title} for an abbreviated version of
% your contribution title if the original one is too long
\author{Yukitoshi Motome\inst{1}\and
Nobuo Furukawa\inst{2}\and Naoto Nagaosa\inst{3}\inst{4}\inst{5}}
% Use \authorrunning{Short Title} for an abbreviated version of
% your contribution title if the original one is too long
\institute{RIKEN (The Institute of Physical and Chemical Research),
2-1 Hirosawa, Saitama 351-0198, Japan
\texttt{motome@riken.jp}
\and Department of Physics, Aoyama Gakuin University,
5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558, Japan
\texttt{furukawa@phys.aoyama.ac.jp}
\and CREST, Department of Applied Physics, University of Tokyo,
7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
\texttt{nagaosa@appi.t.u-tokyo.ac.jp}
\and Correlated Electron Research Center, AIST,
Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
\and Tokura Spin SuperStructure Project, ERATO,
Japan Science and Technology Corporation, c/o AIST,
Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
}
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\maketitle
We theoretically explore the mechanism of the colossal magnetoresistance
in manganese oxides by explicitly taking into account
the phase competition between the double-exchange ferromagnetism and
the charge-ordered insulator.
We find that quenched disorder
causes a drastic change of the multicritical phase diagram
by destroying the charge-ordered state selectively.
As a result, there appears a nontrivial phenomenon of the disorder-induced
insulator-to-metal transition in the multicritical regime.
On the contrary, the disorder induces a highly-insulating state
above the transition temperature
where charge-ordering fluctuations are much enhanced.
The contrasting effects provide an understanding of
the mechanism of the colossal magnetoresistance.
The obtained scenario is discussed in comparison with
other theoretical proposals such as
the polaron theory, the Anderson localization,
the multicritical-fluctuation scenario, and
the percolation scenario.
\section{Introduction}
\label{sec:1}
Colossal magnetoresistance (CMR) in perovskite manganese oxides $A$MnO$_3$
has attracted much attention in the physics of
strongly-correlated electron systems
\cite{Ramirez1997,Tokura2000,Dagotto2001}.
In these materials, carrier doping by chemical substitutions of $A$-site ions,
e.g., Ca substitutions into La-site in LaMnO$_3$,
leads to a ferromagnetic metal (FM) at low temperatures.
In this regime, the resistivity shows a rapid decrease
by applying an external magnetic field near the critical point,
which is called the CMR effect.
The doped FM state and the negative magnetoresistance are basically
understood by the Zener's double-exchange (DE) interaction
\cite{Zener1951,Furukawa1999}.
In the Zener's scenario, the system consists of
conduction electrons and localized spins, and
there is a strong ferromagnetic Hund's coupling between them.
Through this strong correlation,
the external magnetic field which aligns the localized spins ferromagnetically
increases the kinetic energy of electrons to induce a metallic state.
Recent development in experiments, partly promoted by
potential applications to electronic engineering
such as spintronics devices,
has achieved to enhance the CMR effect;
the resistivity sharply decreases on the order of $10^4-10^6$
by the magnetic field of only a few Tesla.
One of the important features of the enhanced CMR is
a characteristic temperature dependence of the resistivity
at zero magnetic field.
The resistivity shows good metallic behavior below
the ferromagnetic transition temperature $T_{\rm C}$
while it shows highly-insulating behavior above $T_{\rm C}$.
That is, the resistivity shows a steep increase toward $T_{\rm C}$ from above
and suddenly drops near $T_{\rm C}$.
The highly-insulating state just above $T_{\rm C}$
is very sensitive to the magnetic field,
which leads to the enhanced CMR effect.
Therefore, the origin of the highly-insulating state above $T_{\rm C}$
is a key to understand the mechanism of the enhanced CMR effect.
Either the highly-insulating nature or the huge response
to the external magnetic field cannot be explained by the simple DE theory.
There have been many theoretical proposals which attempt to explain them.
Several scenarios are based on the single-particle picture
such as spin polaron
\cite{Varma1996}
or Jahn-Teller (JT) polaron theory
\cite{Millis1995,Roder1996}
and Anderson localization scenario by quenched disorder
\cite{Letfulov2001,Narimanov2002}.
Recently, some attempts have also been made
to understand the enhanced CMR as a cooperative phenomenon
due to the many-body correlation,
such as the multicritical-fluctuation scenario
\cite{Murakami2003}
and the percolation scenario
\cite{Moreo1999,Burgy2001}.
It is highly desired to clarify which is a suitable picture.
Several experiments indicate that
the importance of a keen competition between different phases
and quenched disorder for the CMR phenomena.
One of the systematic investigations has been explored
in a new class of materials
$A_{1/2}$Ba$_{1/2}$MnO$_3$
\cite{Millange1998,Nakajima2002,Akahoshi2003}.
It is found that under a special condition of the synthesis,
$A$ ions and Ba ions constitute a periodic layered structure.
In these $A$-site ordered materials,
every Mn site has an equivalent environment of the surrounding ions,
and therefore, there is no disorder from the alloying effect.
In a usual synthesis process or by annealing the $A$-site ordered materials,
one obtains the materials in which $A$ and Ba ions
distribute randomly, and there is structural and electrostatic
disorder at Mn sites.
Since the systematic change of the average radius of $A$-site ions
is known to modify the electron bandwidth,
it is now possible to control
both electron correlation and quenched disorder
in a systematic way in these new materials.
\begin{figure}
\centering
\includegraphics[width=8cm]{fig-phase_diagram_exp.eps}
\caption
{
Experimental phase diagram for $A_{1/2}$Ba$_{1/2}$MnO$_3$
obtained in Ref.~\cite{Akahoshi2003}.
The horizontal axis is the averaged ionic radius of the $A$-site ion.
$T_{\rm C}$, $T_{\rm CO}$, $T_{\rm N}$, and $T_{\rm SG}$
denote the transition temperatures for
FM, COI, the antiferromagnetic state, and the glassy state, respectively.
The hatched area is the disorder-induced COI-to-FM transition regime.
The shaded area shows the region where COI is destroyed
by introducing the $A$-site disorder.
See the text and Ref.~\cite{Akahoshi2003} for details.
}
\label{fig:phase diagram exp}
\end{figure}
Figure~\ref{fig:phase diagram exp} shows the phase diagram
of this class of materials obtained by Akahoshi {\it et al.}
\cite{Akahoshi2003}.
Open symbols connected by the solid line in the figure are
the results in the $A$-site ordered materials.
There, the system shows a typical multicritical phase diagram,
that is, the FM transition temperature $T_{\rm C}$ and
the charge-ordered insulator (COI) transition temperature $T_{\rm CO}$
meet with each other at almost the same temperature
(the multicritical point).
In the disordered materials,
the multicritical phase diagram shows a drastic change
in an asymmetric manner as shown by
the closed symbols connected by the dashed line in the figure.
That is, the FM state is robust in spite of
a suppression of $T_{\rm C}$,
whereas the COI state completely disappears and is replaced
by a glassy state at very low temperatures below $T_{\rm SG}$.
The multicritical point is shifted to
the left side of the phase diagram,
and at the same time, is suppressed down to a lower temperature.
Consequently, there appears a nontrivial regime
in which the disorder induces the transition from COI to FM
(the hatched area in Fig.~\ref{fig:phase diagram exp}).
An important observation is that
in this regime of the disorder-induced COI-to-FM transition,
the resistivity shows the characteristic temperature dependence
mentioned above, i.e., the highly-insulating state above $T_{\rm C}$
followed by a sudden drop below $T_{\rm C}$.
There, the typical enhanced CMR effect is obtained
by applying a small external magnetic field
\cite{Akahoshi2003}.
Similar phenomena are also observed
in $A_{0.55}$(Ca,Sr)$_{0.45}$MnO$_3$
\cite{Tomioka2002,Tomioka2003}
and in Cr doping in $A_{1/2}$Ca$_{1/2}$(Mn,Cr)O$_3$
\cite{Barnabe1997,Kimura1999,Moritomo1999,Katsufuji1999}.
Another crucial observation is that
strong fluctuations of charge and lattice orderings
are observed in the highly-insulating state above $T_{\rm C}$,
but they are largely suppressed below $T_{\rm C}$
\cite{Tomioka2003}.
This reentrant behavior appears to correlate with the temperature
dependence of the resistivity.
These experimental results strongly suggest that
the disorder
plays a significant role
in the multicritical phenomena
to induce the enhanced CMR effect.
The purpose of this Contribution is
to investigate the phase competition in the multicritical regime and
the disorder effect theoretically.
We will explore a comprehensive understanding of the enhanced CMR effect
on the basis of a cooperative-phenomenon picture
rather than a single-particle one.
In the next section \ref{sec:2}, we introduce
an extended DE model to describe
the phase competition, and
briefly explain the numerical method.
The results are presented in Sec.~\ref{sec:3}.
We discuss the origin of CMR on the basis of our results in Sec.~\ref{sec:4}.
We also compare our results with experimental data and
other theoretical proposals.
Sec.~\ref{sec:5} is devoted to summary and concluding remarks.
\section{Model and Method}
\label{sec:2}
In the present study, we consider a minimal model
which captures the competition between FM and COI.
We take account of the conventional DE interaction
as a stabilization mechanism of FM state.
As for COI, we consider one of the simplest mechanisms,
i.e., the electron-phonon coupling to the breathing-type distortions
\cite{Verges2002}.
The explicit form of the Hamiltonian reads
\cite{Motome2003}
\begin{eqnarray}
H &=& -t \sum_{\langle ij \rangle \sigma}
(c_{i\sigma}^{\dagger} c_{j\sigma} + {\rm H.c.})
- J_{\rm H} \sum_i \sigma_i^z S_i
\nonumber
\\
&& -g \sum_i n_i Q_i + \frac12 \sum_i Q_i^2
+ \frac{\lambda}{2} \sum_{\langle ij \rangle} Q_i Q_j
+ \sum_i \epsilon_i n_i,
\label{eq:H}
\end{eqnarray}
where the summation with $\langle ij \rangle$ is taken over
the nearest-neighbor sites $i$ and $j$, and
the index $\sigma$ denotes the spin of conduction electrons.
The first line of Eq.~(\ref{eq:H}) is for the DE part;
the first term describes the kinetic energy of
the single-band conduction electrons
with the transfer integral $t$, and
the second term denotes the ferromagnetic Hund's coupling
between the conduction electron spin $\sigma_i$ and
the localized spin $S_i$.
For simplicity, we consider the limit of $J_{\rm H} \rightarrow \infty$
and the coupling of the Ising symmetry, i.e., $S_i = \pm 1$,
which retains the essential physics of the DE ferromagnetism
\cite{Motome2001}.
The first term in the second line of Eq.~(\ref{eq:H}) describes
the electron-phonon coupling of the breathing type
where $g$ is the coupling constant,
$n_i = \sum_{\sigma} c_{i\sigma}^{\dagger} c_{i\sigma}$
is the local electron density, and
$Q_i$ is the amplitude of the distortion at the site $i$.
The next two terms denote the elastic energy of distortions.
The latter term
describes a cooperative aspect of the lattice distortion, where
$\lambda$ is taken to be positive
because a shrinkage (expansion) of a MnO$_6$ octahedron tends to
expand (shrink) the neighboring MnO$_6$ octahedra.
Lattice distortions are treated as classical objects for simplicity.
The last term in Eq.~(\ref{eq:H}) is for the quenched disorder
which couples to conduction electrons.
In real materials, the alloying effect of $A$-site ions in $A$MnO$_3$
as well as of the Cr substitution into the Mn sites causes
structural and electrostatic disorder,
which modifies the on-site potential through the Madelung energy.
Here, we mimic this by the random on-site energy $\epsilon_i$.
We consider the model (\ref{eq:H}) on the two-dimensional (2D) square lattice
in the half-doped case, i.e., $0.5$ electron per site on average.
We set the half-bandwidth in the case of $J_{\rm H} = g = \epsilon_i = 0$
as an energy unit, i.e., $W = 4t = 1$.
We take $\lambda = 0.1$ hereafter.
We consider the binary-type distribution of the random potential,
i.e., $\epsilon_i = \pm \Delta$.
When $g$ is small (large bandwidth), the DE part is dominant and stabilizes FM
at low temperatures.
On the other hand, when $g$ is large (small bandwidth),
the electron-phonon coupling becomes dominant and
induces the checkerboard-type charge order (CO) with the wave number $(\pi, \pi)$.
Hence, the competition between FM and COI is expected in our model (\ref{eq:H})
by controlling $g/W$.
In the $A$-site ordered materials,
the $A$-site substitution modifies mainly the bandwidth of conduction electrons
through changes of the length and the angle of Mn-O-Mn bonds.
The right (left) hand side of the phase diagram
in Fig.~\ref{fig:phase diagram exp}
corresponds to larger (smaller) bandwidth regime
where FM (COI) is stabilized at low temperatures.
In the $A$-site disordered materials, the situation is more complicated;
the $A$-site substitution may change the bandwidth as well as
the strength of the disorder.
In the following, we investigate the model (\ref{eq:H})
by changing both $g$ and $\Delta$ systematically
to understand the physics of the competing phases observed in experiments.
We study thermodynamic properties of the model (\ref{eq:H})
by employing the Monte Carlo (MC) simulation.
In the MC sampling, physical quantities are averaged
for configurations of localized spins $\{ S_i \}$
and lattice distortions $\{ Q_i \}$ which are randomly generated
by using the importance sampling technique.
The MC weight is calculated
by the diagonalization of the electronic part
for a given configuration of $\{ S_i \}$ and $\{ Q_i \}$.
In the presence of disorder, we take a quenched random average
for different configurations of the on-site random potential
$\{ \epsilon_i \}$.
For the details of MC calculations, readers are referred to
Ref.~\cite{Motome2003}.
In the present system, since the competition between different orders as well as
the spatial inhomogeneity due to the disorder is important,
it is crucial to distinguish
short-range correlations and long-range orders
by applying the systematic finite-size scaling analyses
\cite{Motome2004}.
\section{Results}
\label{sec:3}
\subsection{Disorder Effect on Multicritical Phase Diagram}
\label{sec:3.1}
In the pure case without disorder ($\Delta = 0$),
the model (\ref{eq:H}) shows the multicritical phase diagram
as shown in Fig.~\ref{fig:phase diagram} (a).
There, we have four different phases;
the high-temperature para phase,
FM phase in the small $g/W$ regime,
COI phase in the large $g/W$ regime, and
the coexisting phase of ferromagnetism and charge ordering (F+COI) in between.
Note that the coexisting F+COI state is uniform and not phase-separated.
Thus, the phase diagram shows a tetracritical topology
\cite{note:bicritical}.
From the systematic study of the density of states (not shown here),
we find a metal-insulator transition at the phase boundary
between FM and F+COI phases.
\begin{figure}
\centering
\includegraphics[width=11cm]{fig-phase_diagram.eps}
\caption
{
(a)-(c) Phase diagrams of the model (\ref{eq:H})
for the change of the disorder strength $\Delta$.
Circles (squares) denote the transition temperatures
for the ferromagnetism (the charge ordering)
estimated by using the finite-size scaling up to $8 \times 8$ sites.
The lines are guides for the eyes.
In (b) and (c), the results for the pure case (a)
are shown by gray symbols and lines for comparison.
The change of the phase diagram is schematically summarized in (d).
}
\label{fig:phase diagram}
\end{figure}
When we introduce the disorder to the system,
the multicritical phase diagram shows
the systematic and drastic change
as shown in Figs.~\ref{fig:phase diagram} (b) and (c).
The FM phase is robust to the disorder
showing a slight decrease of $T_{\rm C}$,
whereas the COI phase is surprisingly unstable to the disorder.
The critical temperature $T_{\rm CO}$ rapidly decreases
with increasing the strength of disorder $\Delta$, and
the COI phase finally collapses at $\Delta \sim 0.2W$
in the parameter range of the present MC calculations.
The asymmetric change of
the multicritical phase diagram for the disorder
is schematically summarized in Fig.~\ref{fig:phase diagram} (d).
In the following, we will explore the mechanism of this change
to clarify the origin of the enhanced CMR.
\subsection{Fragility of Commensurate Insulator against Disorder}
\label{sec:3.2}
FM state is robust to the disorder
because the DE ferromagnetism is stabilized
by the kinetics of conduction electrons.
$T_{\rm C}$ is proportional
to the kinetic energy which gradually decreases with the disorder
\cite{Motome2003a}.
On the contrary, we found that COI is surprisingly fragile against the disorder.
The fragility is understood by the out-of-phase pinning phenomenon as follows.
Figure~\ref{fig:DOS COI} (a) shows the MC results of
the density of states (DOS) in the COI regime.
Even when the disorder destroys the long-range CO,
the gap structure in DOS remains robust
as shown in the figure.
This means that short-range correlations survive and
local lattice distortions persist to open the gap.
Therefore, the fragility of the COI phase is not due to
the rapid decrease of the amplitude of lattice distortions,
but due to the disturbance of the phase of the commensurate ordering.
The random potential to electrons is `a random field'
to CO, and
it easily pins the commensurate ordering pattern
with introducing antiphase domain walls
as schematically shown in Fig.~\ref{fig:DOS COI} (b).
\begin{figure}
\centering
\includegraphics[width=11cm]{fig-DOS_COI.eps}
\caption
{
(a) The density of states at $g = 1.6$ and $T = 0.016$
calculated for $8 \times 8$-sites systems.
(b) A schematic picture of the out-of-phase pinning
for the checkerboard-type charge ordering.
White (black) circles denote electrons (holes), and
crosses are the random pinning centers.
The dashed gray curve shows an antiphase domain wall.
}
\label{fig:DOS COI}
\end{figure}
\subsection{Highly-Insulating State above $T_{\rm C}$}
\label{sec:3.3}
The out-of-phase pinning picture suggests that
there remain short-range charge correlations and fluctuations
in the region where the long-range CO is destroyed by the disorder.
This is indeed the case.
Figure~\ref{fig:kai} shows the temperature dependences of
the susceptibility of the staggered lattice distortion
which is calculated by fluctuations of the COI order parameter.
Although the long-range CO is destroyed by the disorder and
the diverging behavior at $T_{\rm CO}$ in the pure case is smeared out,
fluctuations of charge and lattice orderings remain finite
and are enhanced toward $T_{\rm C}$
even at a finite $\Delta$.
This could be regarded as a reminiscence of
the multicritical phenomenon in the pure case
\cite{Murakami2003}.
We note that the fluctuations are suppressed for large values of $\Delta$.
We consider that for very strong disorder,
the system may favor rather a static state with small COI clusters
rather than the fluctuating state.
This crossover will be discussed in Sec.~\ref{sec:4.3}.
\begin{figure}
\centering
\includegraphics[width=6cm]{fig-kai.eps}
\caption
{
Temperature dependence of the staggered susceptibility
of the lattice distortion
calculated at $g=1.0$ for $8 \times 8$-sites systems.
The gray arrows indicate the values of $T_{\rm C}$
in the presence of disorder.
}
\label{fig:kai}
\end{figure}
The remaining fluctuations of CO affect the electronic states
in the high-temperature regime.
Figures~\ref{fig:highT} show the MC results of
(a) DOS and (b) the optical conductivity in this regime.
As $\Delta$ becomes larger,
the dip in DOS at the Fermi energy becomes deeper, and
the low-energy weight of $\sigma(\omega)$ becomes smaller
to develop a quasi-gap feature.
Thus, the disorder induces fluctuations of CO, and
tends to make the system insulating in the high-temperature regime.
\begin{figure}
\centering
\includegraphics[width=11cm]{fig-highT.eps}
\caption
{
(a) The density of states ($8 \times 8$ sites) and
(b) the optical conductivity ($6 \times 6$ sites)
at $g = 0.8$ and $T = 0.06$.
}
\label{fig:highT}
\end{figure}
\subsection{Disorder-Induced Insulator-to-Metal Transition}
\label{sec:3.4}
\begin{figure}
\centering
\includegraphics[width=11cm]{fig-ItoM.eps}
\caption
{
(a) The density of states at $g = 0.8$ and $T = 0.016$ ($8 \times 8$ sites).
(b) The optical conductivity at $g = 0.8$ and $T = 0.02$ ($6 \times 6$ sites).
}
\label{fig:ItoM}
\end{figure}
In contrast to the enhanced insulating nature at high temperatures,
we find a remarkable phenomenon at low temperatures
in the multicritical regime, that is,
the disorder-induced insulator-to-metal transition.
Figures~\ref{fig:ItoM} show (a) DOS and
(b) the optical conductivity
close to the metal-insulator phase boundary.
In the pure case ($\Delta=0$), DOS shows a finite gap and
$\sigma(\omega)$ has a gap structure due to the long-range CO.
When we introduce the disorder, the gap is suddenly filled and
there appears a finite DOS at the Fermi energy.
At the same time, the low-energy spectral weight of $\sigma(\omega)$
rapidly increases.
These strongly indicate that the disorder induces
the transition from the commensurate insulator to a metallic state.
Such a phenomenon caused by the multicritical phase competitions
is surprising and counter-intuitive
because in general the disorder tends to localize electrons and
to make the system more insulating.
We note that the optical conductivity in the multicritical regime
in Fig.~\ref{fig:ItoM} (b) as well as in Fig.~\ref{fig:highT} (b)
shows drastic reconstruction in the wide energy range up to
$\omega \sim W$ by a small disorder of only the order of $0.1W$.
This is a consequence of the cooperative phenomena
in the phase-competing regime.
\subsection{Brief Summary of Results}
\label{sec:3.5}
Here, we give a short summary of our results.
MC simulation revealed that our model (\ref{eq:H}) exhibits
the multicritical phenomenon due to the competition
between FM and COI states, and
the competing phases show the asymmetric response to the disorder.
The COI phase is very unstable to the disorder
while the FM phase is rather robust, which leads to
the disorder-induced insulator-to-metal transition at low temperatures.
In spite that the long-range CO is destroyed at low temperatures,
the short-range correlations of CO are enhanced by the disorder
at high temperatures,
which tends to make the system more insulating.
Thus, we obtain reentrant behavior, i.e.,
charge and lattice correlations are enhanced as decreasing temperature, but
they are suppressed below $T_{\rm C}$.
This is considered to be entropy-driven reentrant behavior;
the short-range CO state has rather high entropy
related to configurations of the antiphase domain walls, and
is favored at high temperatures due to the high entropy.
We consider that
this reentrant behavior is
an origin of CMR phenomena as discussed in Sec.~\ref{sec:4.1}.
Our results elucidate an important role of
the contrasting nature of the competing phases.
The FM phase is stabilized by the kinetics of conduction electrons, and
has a long-range ordering with the wave number ($0,0$).
On the other hand, the COI phase is stabilized by
a commensurate lattice ordering with the wave number ($\pi,\pi$).
The former is robust but the latter is fragile
against the out-of-phase pinning by disorder.
The competition between the uniform metal and
the commensurate insulator plays a central role.
\section{Discussions}
\label{sec:4}
\subsection{Origin of CMR}
\label{sec:4.1}
In this section, we discuss the origin of CMR suggested by our results.
We found in Sec.~\ref{sec:3}
the contrasting effects of disorder on the electronic states
in the phase competing regime, i.e.,
the insulator-to-metal transition at low temperatures and
the enhanced insulating nature at high temperatures.
The former occurs in the hatched area
in the schematic phase diagram shown in Fig.~\ref{fig:CMR} (a).
The latter is conspicuous in the shaded area in Fig.~\ref{fig:CMR} (a)
where we found the enhanced fluctuations of charge and lattice orderings.
The contrasting effects of disorder and
the resultant reentrant behavior of charge and lattice correlations
provide a key to understand
the enhanced CMR effect observed in experiments.
Schematic temperature dependences of the resistivity
along the downward arrow in Fig.~\ref{fig:CMR} (a)
are shown in Fig.~\ref{fig:CMR} (b), suggested
by our numerical results of $\sigma(\omega)$ in Sec.~\ref{sec:3}.
In the pure case with $\Delta = 0$, the resistivity sharply increases
below the COI transition temperature $T_{\rm CO}$
as shown by the dashed curve in Fig.~\ref{fig:CMR} (b).
When the disorder is introduced into the system,
the high-temperature resistivity increases
because the disorder enhances the insulating nature there.
On the contrary, at a low temperature,
we have the insulator-to-metal transition induced by the disorder,
where the resistivity should show a sudden drop.
Hence, we obtain the characteristic temperature dependence
for $\Delta \neq 0$ as shown by the solid curve in Fig.~\ref{fig:CMR} (b).
Note that the temperature dependence is in accord with
that of charge and lattice fluctuations found in Fig.~\ref{fig:kai},
which illuminates the close relation
between the resistivity and these fluctuations.
The enhanced insulating state near above $T_{\rm C}$ is known to
show a huge response to
a small external magnetic field, i.e., the enhanced CMR
as mentioned in Sec.~\ref{sec:1}.
Such a huge response is expected in the shaded region in Fig.~\ref{fig:CMR} (a)
where fluctuations of charge and lattice orderings
are enhanced by the disorder.
Thus, the enhanced CMR phenomena
can be understood by the contrasting effects of the disorder
in the phase competition between the uniform metal and
the commensurate insulator.
\begin{figure}
\centering
\includegraphics[width=11cm]{fig-CMR.eps}
\caption
{
(a) Schematic phase diagram of the model (\ref{eq:H}).
Dashed curves denote $T_{\rm C}$ and $T_{\rm CO}$
in the absence of disorder, and
the solid curve denotes $T_{\rm C}$ in the presence of disorder.
See Fig.~\ref{fig:phase diagram} (d).
The hatched area shows the region where
the disorder-induced insulator-to-metal transition takes place.
The shaded area denotes the relevant regime to the huge CMR effect
where COI fluctuations are substantial and
the highly-insulating state is realized.
(b) Temperature dependences of the resistivity
along the downward arrow in (a) suggested by the present study.
Dashed and solid curves correspond to the cases
without and with disorder, respectively.
}
\label{fig:CMR}
\end{figure}
\subsection{Comparison with Experimental Results}
\label{sec:4.2}
Our results well reproduce the experimental results in CMR manganites
of the $A$-site ordered/disordered materials
\cite{Nakajima2002,Akahoshi2003},
$A_{0.55}$(Ca,Sr)$_{0.45}$MnO$_3$
\cite{Tomioka2002,Tomioka2003},
and Cr-doped materials $A_{1/2}$Ca$_{1/2}$(Mn,Cr)O$_3$
\cite{Barnabe1997,Kimura1999,Moritomo1999,Katsufuji1999}
in the following aspects;
\begin{itemize}
\item multicritical phase diagram in clean cases,
\item asymmetric change of the multicritical phase diagram
by introducing disorder, in particular, the fragility of COI phase,
\item disorder-induced insulator-to-metal transition
in the multicritical regime,
\item highly-insulating state above $T_{\rm C}$ in the presence of disorder,
\item remaining short-range correlations or fluctuations
of charge and lattice orderings
in the insulating state above $T_{\rm C}$
observed in Raman scattering and diffuse X-ray scattering experiments,
\item reentrant temperature dependence commonly observed in
the resistivity and the charge and lattice fluctuations.
\end{itemize}
The agreement strongly indicates that
our model (\ref{eq:H}) captures the essential physics of
phase competing phenomena and
disorder effects on them in CMR materials.
We also note that our results give an understanding of
the close relation between the charge fluctuations and CMR
found in La$_{1-x}$Ca$_x$MnO$_3$ at $x \sim 1/3$
\cite{Dai2000,Adams2000}.
\subsection{Comparison with Other Theoretical Scenarios}
\label{sec:4.3}
Finally, we compare our scenario with
other theoretical proposals for the mechanism of CMR.
As discussed in Sec.~\ref{sec:1},
CMR is a kind of localization-delocalization phenomenon
at the ferromagnetic transition temperature $T_{\rm C}$.
The low-temperature metallic phase is basically understood by
the Zener's DE mechanism, and hence,
the problem is how to understand the high-temperature insulating state
above $T_{\rm C}$.
Several proposals are based on the single-particle picture.
One is the polaron scenario including both spin polaron
\cite{Varma1996}
and JT polaron theories
\cite{Millis1995,Roder1996}.
In this scenario, the high-temperature insulating state is
described by the self trapping of electrons to form small polarons.
Another scenario is the Anderson localization
due to the quenched disorder
\cite{Letfulov2001,Narimanov2002}.
For both scenarios, it is difficult to answer the following questions
on the general aspects of the enhanced CMR comprehensively:
\begin{itemize}
\item Why does the localized state at high temperatures become
unstable at lower temperatures?
\item Why does the localization-delocalization transition always
coincide with the ferromagnetic transition
without fine tuning of parameters?
\item Why does the disorder cause the insulator-to-metal transition
as observed in the $A$-site ordered manganites?
\item Why is CMR observed in wide region of the phase diagram, or
why does the localization occur even at highly carrier-doped region?
\end{itemize}
Hence, the single-particle pictures
appear to be insufficient to explain the enhanced CMR.
In particular, they cannot explain the experimental fact that
the `clean' system shows the multicritical phase diagram
while the disorder induces the CMR phenomenon in the multicritical regime.
On the contrary,
our results based on the cooperative-phenomenon picture
give a comprehensive understanding of
CMR as a localization-delocalization phenomenon.
Essential ingredients are the phase competition and the disorder,
which are found in general in manganites and do not need
fine tuning of parameters.
Our theory answers why the delocalization occurs at $T_{\rm C}$
as well as why the disorder induces the insulator-to-metal transition.
We note that there have been proposed
other cooperative-phenomenon scenarios.
One is the multicritical-fluctuation scenario
\cite{Murakami2003}
in which enhanced fluctuations near the multicritical point play
an important role in the insulating state above $T_{\rm C}$.
The scaling law for the magnetization curve (the so-called Arrot plot)
shows an evidence for this scenario.
Although the scaling holds for a class of materials with weak
disorder in which the multicritical point is at rather high
temperature, it does not show good agreement with the others where
the multicritical point is suppressed down to low temperatures by
the disorder and the typical CMR is observed.
Another proposal is the percolation scenario
which explicitly takes account of the disorder.
In this scenario, it is supposed that
the disorder induces the percolated mixtures of FM and COI islands
below $T^*$ which is the transition temperature $T_{\rm C}$ or
$T_{\rm CO}$ in the absence of the disorder
\cite{Moreo1999,Burgy2001}.
The resistivity is determined by the percolating path, and
is sensitive to the pattern of the coexisting FM and COI regions
which is easily changed by an external magnetic field.
However, the theory is limited to a phenomenological level and
does not give a microscopic explanation for
the disorder-induced insulator-to-metal transition
as well as the reentrant behavior of CO fluctuations.
Moreover, this rather static picture
appears to be incompatible with recent experimental results
which indicate a dynamically-fluctuating state
just above $T_{\rm C}$
\cite{MoriPC}.
Compared with above two scenarios based on the cooperative-phenomenon picture,
our theory is considered to interpolate these two limiting pictures, i.e.,
it elucidates what happens in weak or moderate disorder regime
in the phase-competing system.
There, short-range correlations or
dynamical fluctuations of charge and orbital orderings remain substantial
and are relevant to the localization at high temperatures.
In our numerical results in Sec.~\ref{sec:3},
we do not find
any clear indication of the percolated cluster formation below $T^*$
\cite{Motome2003}, and
such static phase separation may be
relevant in rather strong disorder regime
where CO fluctuations are largely suppressed
as implied by Fig.~\ref{fig:kai}.
Out theory, which describes the crossover
from the clean to dirty limits, strongly suggests that
the enhanced CMR occurs in the weak or moderate disorder regime
with large fluctuations.
Note that the unbiased numerical calculations play key roles
to reveal the highly-nontrivial properties
in the weak or moderate disorder regime .
\section{Summary and Concluding Remarks}
\label{sec:5}
In this Contribution,
we discussed the phase competition
between ferromagnetic metal and charge-ordered insulator
and the role of the disorder
by applying the Monte Carlo calculations
to an extended double-exchange model.
Highly nontrivial phenomena are revealed
such as the disorder-induced insulator-to-metal transition
as well as the entropy-driven reentrant behavior of charge-ordering fluctuations.
Our results show good agreement
with recent experimental results in CMR manganites, and
give a comprehensive understanding of
the origin of the enhanced CMR effect.
There still remain many open problems.
One is the role of other interactions
which are neglected in our simplified model.
One of the neglected elements
is the orbital degree of freedom in the twofold $e_g$ orbitals
which strongly couples with the JT lattice distortion.
This is necessary, at least, to describe a complicated orbital ordering
in the COI phase
\cite{Yunoki1998},
and possibly introduces orbital fluctuations
and enhances the insulating nature in the CMR regime
as the fluctuations of charge and lattice orderings.
Another omitted element is the AF superexchange interaction
between localized spins.
This is important to reproduce
the complicated magnetic structure in the so-called CE phase
as well as the A-type AF metallic phase, and
possibly plays a substantial role in the glassy state
at low temperatures.
Recent theoretical study including these elements reported
similar results to ours
\cite{Aliaga2003}
although the numerical analysis is laborious and very limited
for such a complicated model thus far.
Another issue is the calculation in realistic 3D systems.
The present calculations have been performed in 2D.
The pinning effect due to the disorder is
sensitive to the dimensionality, which should be carefully examined further.
Moreover, in real materials, there may be some spatial correlation
between the disorders, in other words,
a long-range nature of the influence of disorder
through the lattice strain effect or
the cooperative effects of lattice distortions
\cite{Burgy2004}.
There, the orbital degree of freedom should play an important role
through the Jahn-Teller coupling.
It is highly desired to examine such effects for realistic electronic models
in the higher dimension.
The direct calculation of the resistivity also remains
as a hard task for numerical studies.
There are several reports on the resistivity in small-size clusters
which strongly indicate a huge response to the magnetic field
\cite{Verges2002,SenPREPRINT}.
To explain the enhanced CMR effect more quantitatively,
further investigations are necessary
including the development of theoretical tools
to calculate the resistivity directly in larger-scale systems.
\section*{Acknowledgment}
The authors acknowledge Y. Tokura, Y. Tomioka, and E. Dagotto
for fruitful discussions.
This work is supported by Grants-in-Aid for Scientific Research and
NAREGI Nanoscience Project from the Ministry of Education,
Culture, Sports, Science, and Technology.
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% Monographs
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