1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack
Extracted source text · arXiv cond-mat/0408532
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\title{\begin{center} 1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack \end{center}}
\author{C. R\"{u}ster}
\affiliation{Physikalisches Institut (EP3), Universit\"{a}t
W\"{u}rzburg, Am Hubland, D-97074 W\"{u}rzburg, Germany}
\author{C. Gould}
\affiliation{Physikalisches Institut (EP3), Universit\"{a}t
W\"{u}rzburg, Am Hubland, D-97074 W\"{u}rzburg, Germany}
\author{T. Jungwirth}
\affiliation{Institute of Physics ASCR, Cukrovarnická 10, 162 53
Praha 6, Czech Republic} \affiliation{School of Physics and
Astronomy, University of Nottingham, Nottingham NG7 2RD, UK}
\author{J. Sinova}
\affiliation{Department of Physics, Texas A\&M University, College Station, TX 77843-4242, USA}
\author{G. M. Schott}
\affiliation{Physikalisches Institut (EP3), Universit\"{a}t W\"{u}rzburg, Am Hubland, D-97074 W\"{u}rzburg, Germany}
\author{R. Giraud}
\affiliation{Physikalisches Institut (EP3), Universit\"{a}t W\"{u}rzburg, Am Hubland, D-97074 W\"{u}rzburg, Germany}
\author{K. Brunner}
\affiliation{Physikalisches Institut (EP3),
Universit\"{a}t W\"{u}rzburg, Am Hubland, D-97074 W\"{u}rzburg, Germany}
\author{G. Schmidt}
\affiliation{Physikalisches Institut (EP3), Universit\"{a}t W\"{u}rzburg, Am Hubland, D-97074 W\"{u}rzburg, Germany}
\author{L.W. Molenkamp}
\affiliation{Physikalisches Institut (EP3), Universit\"{a}t W\"{u}rzburg, Am Hubland, D-97074 W\"{u}rzburg, Germany}
\date{\today}
\begin{abstract}
We report the discovery of a super-giant tunneling
anisotropic magnetoresistance in an epitaxially grown
(Ga,Mn)As/GaAs/(Ga,Mn)As structure.
The effect arises from a strong dependence of the electronic structure
of ferromagnetic semiconductors on the magnetization orientation
rather than from a parallel or antiparallel alignment of the
contacts. The key novel spintronics features of this effect are: (i)
{\it both} normal and inverted spin-valve like signals; (ii) a large
non-hysteretic magnetoresistance for magnetic fields perpendicular to
the interfaces; (iii) magnetization orientations for extremal
resistance are, in general, not aligned with the magnetic easy and
hard axis.(iv) Enormous amplification of the effect at low
bias and temperatures.
\end{abstract}
\pacs{75.50.Pp, 85.75.Mm }
\maketitle
The emerging field of semiconductor based spintronics, which explores
the spin and charge degrees of freedom on an equal footing, is
expected to lead to novel information technologies that will overcome
current key obstacles in the microelectronics roadmap
\cite{roadmap}. A main component needed to realize the
full potential of this technology is a device with similar behavior
as current metal-based spin-valves \cite{Moodera}, {\em and} with
novel spintronics features unattainable in their metal counterparts.
Previous attempts in this direction have yielded promising spin-valve
results \cite{Higo} apparently mimicking the functionality of the
metal devices. However, our recent discovery of tunneling anisotropic
magnetoresitance (TAMR) in a single (Ga,Mn)As layer structure
\cite{Gould} suggests that the moderate
magnetoresistance (MR) effects observed so far in structures such as
the one in Ref. \onlinecite{Higo} may originate from TAMR rather than
the traditional metal tunneling MR (TMR). If this is the case, the
device behavior should be much richer than for TMR, and could
offer many new functionalities not possible in metal based devices.
To investigate this hypothesis, we have fashioned a tunnel structure
based on the ferromagnetic semiconductor (Ga,Mn)As. We
report the existence of a huge TAMR effect exceeding 100~000\% in
these structures.
\begin{figure}[h!]
\includegraphics[angle=0,width=8cm]{Figure1.eps}
\vspace*{-0.3cm}
\caption{a) Layer stack and b) sample layout. c) Magnetoresistance
near each in-plane easy axis showing both positive
and negative 40\% effects. d) Magnetoresistance in perpendicular field
showing a 400\% predominantly non-hysteretic signal.}
\label{figure1}
\vspace*{-.6cm}
\end{figure}
The full layer structure of our device, shown in
Fig.~\ref{figure1}a, consists of a Ga$_{0.94}$Mn$_{0.06}$As
(10~nm)/GaAs (2~nm) /Ga$_{0.94}$Mn$_{0.06}$As (100~nm) trilayer
grown by low temperature molecular beam epitaxy (LT-MBE) on
a semi-insulating GaAs substrate and an undoped GaAs buffer
layer.
The (Ga,Mn)As layers are intrinsically highly p-type due to the Mn and
have metallic transport character. The undoped LT-GaAs layer on the
other hand is insulating and forms an epitaxial tunnel barrier between
the two ferromagnetic layers. The ferromagnetic transition
temperature of the (Ga,Mn)As is $\sim$ 65 K.
A schematic of the patterned device is shown in
Fig.~\ref{figure1}b. Using optical lithography with positive
photoresist followed by metal evaporation, lift-off, and wet etching
the heterostructure was patterned into a square mesa with sides of
100~$\mu$m and a surrounding electrical back contact. Contact to the
square mesa is established by an in-situ Ti/Au deposition, whereas the
back contact is made after patterning by depositing Ti/Au onto the
lower (Ga,Mn)As layer. Two-probe MR measurements are then performed
for current flowing vertically through the layer stack. Since the bulk
resistivity of the (Ga,Mn)As is only
$\sim$$10^{-3}$~$\Omega$cm, the device resistance is dominated by the
tunnel barrier. Identically patterned control samples without a tunnel
barrier have a resistance of $10$~$\Omega$, proving that any bulk
(Ga,Mn)As MR is fully negligible.
Transport measurements were carried out in a magnetocryostat fitted
with a variable temperature insert and three sets of mutually
orthogonal Helmholtz coils allowing the application of magnetic fields
\textit{$\bf{H}$} of up to 300~mT in any direction. Fields applied in
the plane of the layers are denoted by their angle $\phi$ with respect
to the [100] crystallographic direction. Two different types of
\textit{$\bf{H}$} scans will be presented: MR-scans, which consist of
saturating the sample magnetization in a negative magnetic field along
a given direction and then measuring the resistance of the device as
$|$\textit{$\bf{H}$}$|$ is swept to positive saturation and back
again; and $\phi$-scans, where the resistance is measured for constant
$|$\textit{$\bf{H}$}$|$ while sweeping $\phi$.
Fig.~\ref{figure1}c shows MR-scans taken with a bias voltage V$_{B}$ = 10~mV at a temperature T = 4.2~K along $\phi$ = 0$^{\circ}$
(red) and 90$^{\circ}$ (black), near the two cubic magnetic easy axes
in the (Ga,Mn)As ([100] and [010] respectively) as verified by
SQUID. At low $|$\textit{$\bf{H}$}$|$ after crossing zero in either
sweep directions, \textit{$\bf{M}$} abruptly reverses its
direction. This manifests itself in transport as a discontinuous
change in resistance leading to a ~40\% spin-valve signal. The
measurement along 90$^{\circ}$ appears similar to previous
observations \cite{Higo}, and could easily be mistaken for traditional
TMR. However, the remarkable sign change observed at
$\phi$=0$^{\circ}$ points to a different origin of the effect, and
strongly suggests an interpretation in line with our previous
observations of TAMR in single-ferromagnet devices \cite{Gould}.
As we apply $|$\textit{$\bf{H}$}$|$ at other angles in the plane, the
amplitude of the effect remains constant whereas the position and sign
of the sharp switching events displays a strong angular dependence,
with an underlying symmetry consistent with the one reported for a
single magnetic layer device \cite{Gould}. Neglecting some fine
structure in the shape of the peaks, the relatively straightforward
picture of the two step magnetization reversal reported in \cite{Gould} accounts for this low $|$\textit{$\bf{H}$}$|$ symmetry. It comes from a combination of the magnetic anisotropy of the
(Ga,Mn)As, which is principally cubic with a small in-plane uniaxial contribution, and the fact that magnetic reversal takes place via 90$^{\circ}$ domain wall nucleation and propagation. At low fields,
rather than a coherent rotation of the magnetization, the dominating
reversal mechanism consists of the magnetization switching abruptly
whenever the energy gain by doing so is greater than the energy needed
to nucleate/propagate a domain wall. This leads to the symmetry of the
magnetization reversal consistent with previous studies in epitaxial
Fe layers \cite{Cowburn}.
Another observation distinguishing our effect from TMR is
a strong MR signal observed when \textit{$\bf{H}$} is
applied perpendicular to the plane of the sample, i.e., along
the magnetic hard axis.
Fig.~\ref{figure1}d shows such
a MR-scan at T = 4.2~K and V$_B$ = 5~mV.
The TAMR in
Fig.~\ref{figure1}d is $\sim 400\%$, much larger than for
\textit{$\bf{H}$} in-plane under similar conditions. As explained in the theory
section,
we attribute this to a significant
growth direction strain in our (Ga,Mn)As layers that induces
a large anisotropy between the [001] and [100] (or [010]) directions, compared to
the relatively weak in-plane uniaxial anisotropy mentioned above.
Note
also that the perpendicular TAMR is no longer hysteretic, but occurs
on both sides of \textit{$\bf{H}$}=0,
indicating that it must be related to the absolute rather than the
relative orientations of the ferromagnetic layers.
\begin{figure}[h]
\vspace*{-0.1cm}
\center{\includegraphics[angle=0,width=8.4cm]{Figure2.eps}}
\vspace*{-9cm}
\caption{$\phi$-scans at 4.2~K a) in a saturation magnetic field
$|$\textit{$\bf{H}$}$|$ = 300~mT, and b) $V_{B}$ = 5 mVat $|$\textit{$\bf{H}$}$|$ =
25~mT, just sufficient to switch M between easy axes.}
\label{figure2}
\end{figure}
\vspace*{-0.2cm}
The TAMR is further evidenced through $\phi$-scans at higher magnetic
fields. As can already be seen in Fig.~\ref{figure1}c, the resistance
at saturation is dependent on the direction of magnetization, varying
from 480 to 700~k$\Omega$ as \textit{$\bf{M}$} changes from along
[010] to [100]. This is a unique characteristic of our device,
since in contrast to regular TMR which depends only on
the relative orientation of \textit{$\bf{M}$} in the two layers, our
sample is sensitive to the absolute directions of \textit{$\bf{M}$} in
the layers. Therefore it can act as a sensor of the absolute direction
of \textit{$\bf{H}$}. This characteristic is exhibited in the 5 mV, $|$\textit{$\bf{H}$}$|$ = 300~mT $\phi$-scan of Fig.~\ref{figure2}a. The measurement is
identical for clockwise or counter clockwise $\phi$ sweeps as
$|$\textit{$\bf{H}$}$|$ is sufficiently large to saturate
\textit{$\bf{M}$} such that \textit{$\bf{M}\propto\bf{H}$}. The
resistance changes by more than 250\% between its minimum at
90$^{\circ}$ and its maximum at 165$^{\circ}$. The fact
that the maximum resistance does not lie along the main crystal and
anisotropy axes will be addressed below.
We turn now our attention to Fig.~\ref{figure2}b, showing that the
$\phi$-scan changes dramatically with $|$\textit{$\bf{H}$}$|$. Here
$|$\textit{$\bf{H}$}$|$= 25~mT was chosen to be slightly above the
biggest coercive field in the sample such that it can switch
\textit{$\bf{M}$} from one easy axis to the other as $\phi$ is
swept. The sample was prepared in a known state by saturating
\textit{$\bf{M}$} along the uniaxial easy axis (90$^{\circ}$) and
$|$\textit{$\bf{H}$}$|$ was then lowered to 25~mT. After this $\phi$
was swept in the clockwise (black) or counter clockwise (red
curve) direction.
The main features of the data are $\sim 40$\% jumps in
the resistance between the 500 and 700 k$\Omega$ levels. These can be
understood rather simply by noting that at $\phi=90^{\circ}$ the sample
is in a low resistance state associated with \textit{$\bf{M}$} being
along the [010] easy axis. As $\phi$ is swept nearer to the [100] easy
axis, \textit{$\bf{M}$} will eventually switch to this direction,
corresponding to a high resistance state due to the additional
uniaxial field that breaks the in-plane cubic symmetry in the
(Ga,Mn)As layers. The curves must be different for the two sweep
directions as they should have approximate mirror symmetry about the
easy axis. The deviations from this symmetry may be attributed to
non-uniform strain distributions.
A few additional levels are seen in the data on the edges of the large
switching events. These intermediate states can be explained in a
straightforward way. By design, the magnetic anisotropies of the two
layers are not identical as different strain conditions and
thicknesses create different coercive fields. Thus, as
\textit{$\bf{H}$} is rotated, the layers do not switch simultaneously,
but the softer layer switches earlier. This creates configurations
where the magnetizations of the two layers are not collinear, but
perpendicular to each other. As a control experiment, a similar
$\phi$-scan at $|$\textit{$\bf{H}$}$|$ = 15~mT was made. As expected,
since 15~mT is just below the smallest coercive field in the
structure, no switching took place, and the resistance of the sample
remained constant at its lowest value. This behavior suggests
design perspectives for spin valves programmable in
rotating magnetic fields above a certain threshold magnitude, but not
below.
The data in Figs.~\ref{figure1} and \ref{figure2} establish
unambiguously the TAMR nature of the measured effect. Anisotropies in
the (Ga,Mn)As density of states (DOS) with respect to
\textit{$\bf{M}$}, which result from the strong
spin-orbit coupling in the ferromagnetic semiconductor valance band,
are large enough to explain the effect \cite{Gould}. Consistently, a
sizable anisotropy of the MR of (Ga,Mn)As-based tunnelling structures,
comparing the magnetization parallel or perpendicular to the tunneling
current, was found in an independent theoretical work employing the
Landauer transport formalism \cite{Brey}. The DOS anisotropy
calculations in Ref.\onlinecite{Gould}, based on the kinetic-exchange
model coupling of valence band holes and polarized Mn local moments,
have explained the change of the sign of the TAMR spin-valve like
signal with field angle and temperature, and predicted strong
enhancement of the effect in epitaxial tunnel junctions characterized
by a larger degree of in-plane momentum conservation. Our present
study confirms this prediction and some of the new experimental
features of the (Ga,Mn)As/GaAs/(Ga,Mn)As TAMR can also be understood
based on the DOS anisotropy.
The relative DOS anisotropies, $\Delta$DOS$_{int}$/DOS$_{int}$, for
the DOS at the Fermi energy $E_F$, integrated over an assumed range of
momenta k$_z$ along the tunnelling direction and summed over the
occupied spin-split valence bands, are plotted in Fig. 3 for several
in-plane magnetization orientations. Note that states
at $E_F$ with the largest k$_z$ are expected to have the largest
tunnelling probability when in-plane momentum is conserved and,
therefore, increasing the range of k$_z$ contributing to the
tunnelling DOS corresponds to relaxing the in-plane momentum
conservation condition, or increasing the tunnel barrier
transparency. Theoretical curves in panels (a), (b), and (c) were
obtained for hole densities 0.1, 0.5, and 1 $\times$ 10$^{20}$
cm$^{-3}$, respectively. Although the bulk hole densities in our
(Ga,Mn)As layers are of order 10$^{20}$ cm$^{-3}$, a significant
depletion is expected in the region near the (Ga,Mn)As/GaAs interface
with hole concentration closer to those in panels (b) or (a). The
substitutional Mn$_{\rm Ga}$ concentration of 4\% considered in the
calculations is consistent with the nominal total Mn doping in our
(Ga,Mn)As layers. A uniaxial strain along [010] was introduced to
model the broken in-plane cubic symmetry in the (Ga,Mn)As.
\begin{figure}[h]
\vspace*{0cm}
\includegraphics[angle=0,width=8.0cm]{Figure3.eps}
\vspace*{-0.5cm}
\caption{Theoretical diagrams obtained for hole densities 0.1 (a), 0.5 (b),
and 1 $\times$ 10$^{20}$ cm$^{-3}$ (c) showing the relative
difference between the integrated DOS at the Fermi energy for
M along $\phi=270^{\circ}$) and three different angles $\phi$.
The x-axis represents the integrated DOS at the Fermi energy
that is assumed to contribute to tunneling, relative to the total
DOS at the Fermi energy.
Solid (dashed) lines were obatined for a uniaxial strain
along [010] direction of 0.2\% (0.4\%).}
\label{figure3}
\end{figure}
%\vspace*{-0.5cm}
Fig.~\ref{figure3} demonstrates that the magnitude of the
DOS$_{int}$ anisotropy as well as the magnetization orientations
corresponding to extremal tunnelling DOS have a complex dependence on
the magnetic tunnel junction parameters. Data in panel (a), e.g., show
DOS$_{int}$ anisotropies exceeding 100\% for
DOS$_{int}$/DOS$_{total}\sim$ 10\%. (DOS$_{total}$ denotes the total
DOS at $E_{F}$.) Here the minimum DOS$_{int}$ is for
\textit{$\bf{M}$} at $\phi=270^{\circ}$ while the maximum DOS$_{int}$
is at $\phi=330^{\circ}$, i.e., off the main crystal and magnetic
anisotropy axis. The result provides an explanation for the distorted
cubic symmetry observed in the experimental in-plane angle dependence
of the TAMR (see Fig.~\ref{figure2}a). The enhanced DOS anisotropy
shown by the dashed line in the main panel, which was obtained for
larger strain value (larger magnetic anisotropy), is consistent with
the experimentally observed enhancement of the TAMR when magnetization
is switched between the easy- and hard-axis (see Fig.~\ref{figure1}).
We emphasize, however, that the theoretical data in Fig.~\ref{figure3}
are only illustrative; a more quantitative comparison between the
experiment and theory requires a detailed characterization of the
experimental tunnel junction parameters and a systematic theoretical
analysis of the TAMR and TMR contributions to the hole transmission
coefficients, which is beyond the scope of this short communication
and will be published elsewhere.
\begin{figure}[h]
\hspace*{-0cm}
\includegraphics[angle=0,width=8.4cm]{Figure4.eps}
\vspace*{-3cm}
\caption{Amplification of the effect at low bias voltage and
temperatures. a) TAMR along $\phi$ = 65$^{\circ}$ at 4.2~K for various
bias voltages. b) Super-giant TAMR at 1.7~K and 1~mV bias. c) and d)
$\phi$ at various bias at 1.7~K showing that at low bias and
temperatures, TAMR probes the detailed anisotropies of the density of
states.} \label{figure4}
\end{figure}
\vspace*{0cm}
Another prominent characteristic of our device is the very strong
V$_B$ dependence of the signal displayed in Fig.~\ref{figure4}a. The
various curves show the MR along $\phi$ = 65$^{\circ}$ at \textit{T} =
4.2~K with V$_B$ ranging from 500~$\mu$V up to 10~mV. The low
resistance state has a relatively small variation of $\sim$ 20\% with
decreasing bias. In contrast, the high resistance state increases by
more than 250\%. The amplitude of the TAMR effect is also very sensitive to
$T$, as shown in Fig. 4b. Here we show a V$_B$=1~mV curve at 1.7~K where the effect has grown to 150~000\%. Indeed, this is
merely a lower limit corresponding to the detection limit of our
current amplifier. Although the amplitude of the effect increases
dramatically at low \textit{V$_B$} and \textit{T}, the general
symmetry remains unchanged indicating that the origin of the effect is
unchanged, but that it is amplified by an additional mechanism.
\vspace{-0.05cm}
This super-giant amplification of the TAMR can be understood as a manifestation
of a well known zero bias anomaly \cite{Lee} in tunneling from a
dirty metal which appears due to the opening of an Efros-Shklovskii
gap \cite{Efros} at $E_F$ when crossing the metal-insulator
transition. Indeed, such an effect should be observed in our device
given the short (Ga,Mn)As mean free path of a few \AA~\ which limits the
injector region to a very thin layer near the barrier. Depletion near
the barrier must therefore cause a lower carrier density in the
injector region than in the bulk of the (Ga,Mn)As slab. The injector
will therefore be much closer to the metal-insulator transition than a
typical (Ga,Mn)As layer. Moreover, we already know that the DOS
changes with \textit{$\bf{M}$}. Therefore, when we perform
experiments at low \textit{V$_B$} and \textit{T}, the effective DOS
participating in the tunneling can be brought through the
metal-insulator transition with reorientation of
\textit{$\bf{M}$}, leading to a large amplification of the
TAMR effect. A further indication that the Efros-Shklovskii gap is the dominant enhancing
mechanism is that the amplification of the effect as $T$ changes from 4.2 to
1.7 K is strong for low bias voltage (1 mV), but disappears at higher voltages (10 mV),
consistent with tunneling experiments near the metal-insulator transition of Si:B \cite{Lee}.
Other possible mechanisms for the enhancement of the TAMR,
such as disorder and impurity mediated tunneling, may also play a role
and should not be summarily dismissed. Further experimental and
theoretical study of the problem is needed before the amplification
mechanism can be claimed to be fully understood.
Finally, in Fig.~\ref{figure4}c and d we present $\phi$-scans at 1.7~K
for various V$_B$, which demonstrate another important caracteristic of our
device which is that it acts as a detector for the anisotropies in the
DOS of the (Ga,Mn)As layer. Fig.~\ref{figure4}c already shows some
fine structure, which becomes much more pronounced at lower the
bias. This is to be expected since we start detecting fine
structure in the anisotropy of the DOS, which should be complex given
that the opening of the gap should develop differently for the
various bands which have different effective masses.
In summary, we have observed a super-giant TAMR effect in a
(Ga,Mn)As/GaAs/(Ga,Mn)As tunnel structure which can be of order of a
few hundred \% at 4K, and can be amplified to 150~000\% at lower
temperatures. The behavior of the structure not only mimics normal TMR
when the field is applied along the [010] direction, but also exhibits
new functionalities such as a sensitivity to not only the amplitude,
but also to the direction of an applied magnetic field.
While many of the experimental features of this novel effect can be
understood through the one-particle tunneling DOS anisotropies with
respect to the magnetization orientation, the dramatic amplification
at low biases and temperatures poses new challenging questions for the
theory of tunneling transport in disordered interacting electronic
systems with strong spin-orbit interaction.
The authors thank A.H. MacDonald and M. Flatt\'{e} for useful discussions and V. Hock
for sample preparation, and acknowledge financial support from the EU (SPINOSA), the German BMBF (13N8284) and DFG (BR1960/2-2), the Czech Republic GACR (202/02/0912), and the DARPA SpinS
program. R.G. thanks the Humboldt foundation for financial support.
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\end{document}