Abstract
Self-doping can not only suppress the photogenerated charge recombination of semiconducting quantum dots by self-introducing trapping states within the bandgap, but also provide high-density catalytic active sites as the consequence of abundant non-saturated bonds associated with the defects. Here, we successfully prepared semiconducting copper selenide (CuSe) confined quantum dots with abundant vacancies and systematically investigated their photoelectrochemical characteristics. Photoluminescence characterizations reveal that the presence of vacancies reduces the emission intensity dramatically, indicating a low recombination rate of photogenerated charge carriers due to the self-introduced trapping states within the bandgap. In addition, the ultra-low charge transfer resistance measured by electrochemical impedance spectroscopy implies the efficient charge transfer of CuSe semiconducting quantum dots-based photoelectrocatalysts, which is guaranteed by the high conductivity of their confined structure as revealed by room-temperature electrical transport measurements. Such high conductivity and low photogenerated charge carriers recombination rate, combined with high-density active sites and confined structure, guaranteeing the remarkable photoelectrocatalytic performance and stability as manifested by photoelectrocatalysis characterizations. This work promotes the development of semiconducting quantum dots-based photoelectrocatalysis and demonstrates CuSe semiconducting quantum confined catalysts as an advanced photoelectrocatalysts for oxygen evolution reaction.
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