Abstract
Possibility for collectivization of acceptor states in a semiconductor, converting it to metal, is discussed within the scope of Anderson s-d hybride model. This model is generalized for multicomponent band structure and composite acceptor states, localized on pairs of neighbor dopants (impurity "dumbbells"), in order to describe boron doped diamond CB$_x$. The resulting parameters of band structure, in particular, position of the Fermi level, are compared to the recent experimental data on metallized and superconducting CB$_x$.
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