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Antilocalization and spin-orbit coupling in hole strained GaAs/InGaAs/GaAs quantum well heterostructures

G.M.Minkov and A.A.Sherstobitov and A.V.Germanenko and O.E.Rut and V.A.Larionova and B.N.Zvonkov

cond-mat.dis-nn

Low-field magnetoresistance in p-type strained quantum wells is studied. It is shown that the Rashba mechanism leads to the cubic in quasimomentum spin-orbit splitting of the hole energy spectrum and the antilocalization behavior of low-field magnetoresistance is well described by the Hikami-Larkin-Nagaoka expression.

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